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Effect of an in-situ applied electric field on growth of Bi4Ti3O12 films by sol-gel

机译：原位施加电场对Bi4Ti3O12薄膜生长的影响

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Bi4Ti3O12 (BIT) films were prepared on Pt/TiO2/SiO2/Si substrates by the sol-gel method. A low electric field was in-situ applied to BIT films during rapid thermal annealing (RTA). It was first found that a bias electric field has great influence on the structure, orientation, and morphology of BIT films at proper temperatures. Under the electric field of very low V/cm, BIT films show highly c-axis-oriented growth with second phase of bismuth oxide at 600 and 650 degrees C. The possible origin is proposed. On one hand, the electrostatic energy provides an extra driving force and the cointeraction of the electrostatic energy and interface energy promotes the c-axis-oriented growth of the BIT grains. On the other hand, the second phase of bismuth oxide produced during RTA in an electric field also plays an important role in the control of film orientation. (c) 2006 Elsevier B.V. All rights reserved.
机译：采用溶胶-凝胶法在Pt / TiO2 / SiO2 / Si衬底上制备了Bi4Ti3O12（BIT）薄膜。在快速热退火（RTA）过程中，将低电场原位施加到BIT膜上。首先发现，在适当的温度下，偏置电场对BIT膜的结构，取向和形态有很大的影响。在非常低的V / cm电场下，BIT膜在600和650摄氏度下呈现出高的c轴取向生长，并带有第二相的氧化铋。一方面，静电能提供了额外的驱动力，而静电能与界面能的共同作用促进了BIT晶粒沿c轴取向的生长。另一方面，在电场中RTA期间产生的氧化铋的第二相在控制膜取向中也起重要作用。 （c）2006 Elsevier B.V.保留所有权利。

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