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The importance of the series resistance in calculating the characteristic parameters of the Schottky contacts

机译:串联电阻在计算肖特基触点特征参数中的重要性

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Cd/p-Si Schottky barrier diodes (SBDs) with and without the native oxide layer have been fabricated to determine the importance of the fact that the series resistance value is considered in calculating the interface state density distribution (ISDD) from the forward bias current-voltage (I-V) characteristics of the Cd/p-Si SBDs. The statistical analysis yielded mean values of 0.71 +/- 0.02 eV and 1.24 +/- 0.12 for the BH and ideality factor of the Cd/p-Si SBDs (15 dots) without the native oxide layer (MS), respectively, and mean values of 0.79 +/- 0.02 eV and 1.36 +/- 0.06 eV for the Cd/p-Si SBDs (28 dots) with the native oxide layer (metal-insulating layer-semiconductor (MIS)). The interface state density (Nss) distributions of the devices were calculated taking into account their series resistance values. At the same energy position near the top of the valence band, the interface state density values without taking into account the series resistance value of the devices are almost one order of magnitude larger than Nss obtained taking into account series resistance value. (c) 2006 Published by Elsevier B.V.
机译:已经制造出具有和不具有天然氧化物层的Cd / p-Si肖特基势垒二极管(SBD),以确定在从正向偏置电流计算界面态密度分布(ISDD)时考虑串联电阻值这一事实的重要性。 Cd / p-Si SBD的低电压(IV)特性。统计分析得出的Cd / p-Si SBD(15点)的BH和理想因子的平均值分别为0.71 +/- 0.02 eV和1.24 +/- 0.12,并且均值带有天然氧化物层(金属绝缘层-半导体(MIS))的Cd / p-Si SBD(28个点)的0.79 +/- 0.02 eV和1.36 +/- 0.06 eV。考虑到器件的串联电阻值,计算出它们的界面状态密度(Nss)分布。在价带顶部附近的相同能量位置,不考虑器件串联电阻值的界面态密度值几乎比考虑串联电阻值获得的Nss大一个数量级。 (c)2006年由Elsevier B.V.发布

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