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首页> 外文期刊>Applied Surface Science >Use of TiB2 diffusion barriers for Ni/Au ohmic contacts on p-GaN
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Use of TiB2 diffusion barriers for Ni/Au ohmic contacts on p-GaN

机译：TiB2扩散势垒用于p-GaN上的Ni / Au欧姆接触

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摘要

The use of a TiB2 diffusion barrier for Ni/Au contacts on p-GaN is reported. The annealing temperature (25-950 degrees C) dependence of ohmic contact characteristics using a Ni/Au/TiB2/Ti/Au metallization scheme deposited by sputtering were investigated by contact resistance measurements and auger electron spectroscopy (AES). The as-deposited contacts are rectifying and transition to ohmic behavior for annealing at >= 500 degrees C. A minimum specific contact resistivity of similar to 3 x 10(-4) Omega cm(-2) was obtained after annealing over a broad range of temperatures (800-950 degrees C for 60 s). The contact morphology became considerably rougher at the higher end of this temperature range. AES profiling showed significant Ti and Ni outdiffusion through the TiB2 at 800 degrees C. By 900 degrees C the Ti was almost completely removed to the surface, where it became oxidized. Use of the TiB2 diffusion barrier produces superior thermal stability compared to the more common Ni/Au, whose morphology degrades significantly above 500 degrees C. (c) 2006 Elsevier B.V. All rights reserved.
机译：据报道，TiB2扩散势垒用于p-GaN上的Ni / Au接触。通过接触电阻测量和俄歇电子能谱（AES）研究了通过溅射沉积的Ni / Au / TiB2 / Ti / Au金属化方案，欧姆接触特性对退火温度（25-950摄氏度）的依赖性。沉积后的触点在超过== 500℃的温度下进行整流和转变为欧姆行为，以进行退火。在宽范围内退火后，获得的最小比接触电阻率为3 x 10（-4）Ωcm（-2）温度（800-950摄氏度，持续60 s）。在该温度范围的较高端，接触形态变得相当粗糙。 AES分析表明，在800摄氏度时，Ti和Ni会通过TiB2大量向外扩散。到900摄氏度时，Ti几乎被完全清除到表面，并被氧化。与更常见的Ni / Au相比，使用TiB2扩散阻挡层可产生出色的热稳定性，在500摄氏度以上时其形态会明显下降。（c）2006 Elsevier B.V.保留所有权利。

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