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首页> 外文期刊>Applied Surface Science >Electrochemical luminescence of n-type ZnO semiconductor electrodes doped with rare earth metals under the anodic polarization
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Electrochemical luminescence of n-type ZnO semiconductor electrodes doped with rare earth metals under the anodic polarization

机译：阳极极化下掺稀土金属的n型ZnO半导体电极的电化学发光

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摘要

Electrochemical luminescence (ECL) at n-type ZnO semiconductor electrode was measured under anodic polarization. Scanning the potential imposed on the ZnO electrode, emission was suddenly observed around +20 V. Using the ZnO electrodes doped with rare earth metal ions as Sm3+, Eu3+, Dy3+, Ho3+ and Er3+, much brighter emission was obtained than the ECL of non-doped ZnO. These emission spectra are ascribed to the rare earth metal ions, respectively. This result would show that emission centers of doped ions were selectively excited by electrons that were injected from electrolyte to the electrode by avalanche breakdown under strong anodic bias on the ZnO. (c) 2006 Elsevier B.V. All rights reserved.
机译：在阳极极化下测量n型ZnO半导体电极的电化学发光（ECL）。扫描施加在ZnO电极上的电势，突然在+20 V处观察到发射。使用掺有稀土金属离子的Sm3 +，Eu3 +，Dy3 +，Ho3 +和Er3 +掺杂的ZnO电极，其发射比非ECL的ECL要亮得多。掺杂的ZnO。这些发射光谱分别归因于稀土金属离子。该结果表明，在ZnO上的强阳极偏压下，通过雪崩击穿从电解质注入到电极的电子选择性地激发了掺杂离子的发射中心。 （c）2006 Elsevier B.V.保留所有权利。

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