Field emission from nonaligned SiC nanowires

W.M. Zhou; Y.J. Wu; Eric Siu-Wai Kong; F. Zhu; Z.Y. Hou; Y.F. Zhang

首页> 外文期刊>Applied Surface Science >Field emission from nonaligned SiC nanowires

【24h】

Field emission from nonaligned SiC nanowires

机译：非对准SiC纳米线的场发射

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

β-SiC nanowires with an average diameter of 8-20 nm were synthesized using a simple thermal evaporation of SiO powders onto activated carbon fibers. Field emission was investigated based on the SiC nanowires deposited on a platinum film. A low turn-on field of 3.1 -3.5 V μm~(-1) was measured at an anode-sample separation of 100-140 μm. This type of SiC nanowires can be applied as field emitters in displays as well as vacuum electronic devices.

机译：使用SiO粉在活性炭纤维上的简单热蒸发合成了平均直径为8-20 nm的β-SiC纳米线。基于沉积在铂膜上的SiC纳米线研究了场发射。在100-140μm的阳极样品间距下测得的低导通电场为3.1 -3.5 Vμm〜（-1）。这种类型的SiC纳米线可以用作显示器以及真空电子设备中的场发射器。

著录项

来源
《Applied Surface Science》 |2006年第4期|2056-2058|共3页
作者
W.M. Zhou; Y.J. Wu; Eric Siu-Wai Kong; F. Zhu; Z.Y. Hou; Y.F. Zhang;
展开▼
作者单位

National Key Laboratory of Nano/Micro Fabrication Technology, Research Institute of Micro/Nanometer Science and Technology, Shanghai Jiao Tong University, Shanghai 200030, China;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
SiC; nanowires; field emission with low turn-on field; β-silicon carbide nanowires;

机译：碳化硅;纳米线;低开启场的场发射;β-碳化硅纳米线;

相似文献

外文文献
中文文献
专利

1. Field emission from nonaligned SiC nanowires [J] . Zhou WM, Wu YJ, Kong ESW, Applied Surface Science . 2006,第4期

机译：非对准SiC纳米线的场发射
2. Photoluminescence and electron field-emission properties of SiC-SiO_2 core-shell fibers and 3C-SiC nanowires on silicon nanoporous pillar array [J] . Haiyan Wang, Weifen Jiang, Liping Kang Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2013,第Null期

机译：硅纳米多孔柱阵列上的SiC-SiO_2核壳纤维和3C-SiC纳米线的光致发光和电子场发射特性
3. Al- Doped SiC nanowires wrapped by the nanowire network: excellent field emission property and robust stability at high current density [J] . Li Z. J., Li K. H., Song G. Y., Journal of Materials Chemistry, C. materials for optical and electronic devices . 2018,第24期

机译：由纳米线网络包裹的掺杂SiC纳米线：高电流密度的优异场发射性能和鲁棒稳定性
4. Extreme low voltage field emission of SiC nanowire [C] . Meng Liu, Tie Li, Yuelin Wang Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS . 2017

机译：SiC纳米线的极低电压场发射
5. Simulation and comparison of 3C-SiC, 6H-SiC and 4H-SiC nanowire fets performance. [D] . Hasan, Rajib Ul. 2015

机译：模拟和比较3C-SiC，6H-SiC和4H-SiC纳米线的性能。
6. Maximum field emission current density of CuO nanowires: theoretical study using a defect-related semiconductor field emission model and in situ measurements [O] . Zufang Lin, Peng Zhao, Peng Ye, -1

机译：CuO纳米线的最大场发射电流密度：使用与缺陷相关的半导体场发射模型和原位测量的理论研究
7. Magnetic Field Effect of Near-Field Radiative Heat Transfer for SiC Nanowires/Plates [O] . Zhiyuan Shen, Hao Wu, Han Wang 2018

机译：SiC纳米线/板近场辐射传热的磁场效应
8. Algebraically Special, Nonaligned Nonnull Einstein-Maxwell Fields [R] . Griffiths, J. B. 1984

机译：代数特殊，非线性非线性爱因斯坦 - 麦克斯韦场

Field emission from nonaligned SiC nanowires

摘要

著录项

相似文献

相关主题

期刊订阅