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Analysis of chemical dissolution of the barrier layer of porous oxide on aluminum thin films using a re-anodizing technique

机译:使用再阳极氧化技术分析铝薄膜上多孔氧化物阻挡层的化学溶解

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Chemical dissolution of the barrier layer of porous oxide formed on thin aluminum films (99.9% purity) in the 4% oxalic acid after immersion in 2 mol dm(-3) sulphuric acid at 50 degrees C has been studied. The barrier layer thickness before and after dissolution was calculated using a re-anodizing technique. It has been shown that above 57 V the change in the growth mechanism of porous alumina films takes place. As a result, the change in the amount of regions in the barrier oxide with different dissolution rates is observed. The barrier oxide contains two layers at 50 V: the outer layer with the highest dissolution rate and the inner layer with a low dissolution rate. Above 60 V the barrier oxide contains three layers: the outer layer with a high dissolution rate, the middle layer with the highest dissolution rate and the inner layer with a low dissolution rate. We suggest that the formation of the outer layer of barrier oxide with a high dissolution rate is linked with the injection of protons or H3O+ ions from the electrolyte into the oxide film at the anodizing voltages above 57 V. (c) 2005 Elsevier B.V. All rights reserved.
机译:研究了在50℃下浸入2 mol dm(-3)硫酸中后,在4%的草酸中形成的铝薄膜上形成的多孔氧化物(纯度为99.9%)的阻挡层的化学溶解。使用再阳极氧化技术计算溶解前后的势垒层厚度。已经表明,在57V以上,多孔氧化铝膜的生长机理发生了变化。结果,观察到势垒氧化物中具有不同溶解速率的区域数量的变化。隔离氧化物在50 V下包含两层:具有最高溶解速率的外层和具有低溶解速率的内层。高于60 V时,势垒氧化物包含三层:具有高溶解速率的外层,具有最高溶解速率的中间层和具有低溶解速率的内层。我们建议形成具有高溶解速率的势垒氧化物外层与在高于57 V的阳极氧化电压下将质子或H3O +离子从电解质注入氧化物膜联系起来。(c)2005 Elsevier BV版权所有保留。

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