New physical techniques for IC functional analysis of on-chip devices and interconnects

Boit C

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New physical techniques for IC functional analysis of on-chip devices and interconnects

机译：用于片上设备和互连的IC功能分析的新物理技术

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Localization of functional fails in ICs makes use of physical interactions that the devices produce under electrical operation. The focus is on electroluminescence (keyword: photon emission) and signal responses to stimulation by scanned beams of laser light or particles. In modem chip technologies access of this information is only available through chip backside. This paradigm shift requires a full revision of chip analysis techniques and processes. This has also been a kick-off of a rush in development of new methodologies. Here, an overview is given which parameters are crucial for successful analysis techniques of the future and how photon emission, laser based techniques and new preparation techniques based on focused ion beam (FIB) open the path into this direction. (c) 2005 Published by Elsevier B.V.

机译：IC中功能故障的本地化利用了器件在电气操作下产生的物理相互作用。重点是电致发光（关键字：光子发射）和对激光或粒子的扫描光束对刺激的信号响应。在现代芯片技术中，只能通过芯片背面访问此信息。这种模式转变要求对芯片分析技术和过程进行全面修订。这也是新方法开发热潮的开始。在此，概述了哪些参数对于未来成功的分析技术至关重要，以及基于聚焦离子束（FIB）的光子发射，基于激光的技术和新制备技术如何打开通往这一方向的道路。（c）2005年由Elsevier B.V.

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《Applied Surface Science》 |2005年第1期|p. 18-23|共6页
作者
Boit C;
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作者单位

TU Berlin Univ Technol, D-10589 Berlin, Germany;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
failure analysis through chip backside; photon emission; PICA; thermal laser stimulation (TLS); soft defect localization (SDL); OBIRCH; TIVA; LADA; circuit edit; focused ion beam (FIB);

机译：通过芯片背面进行故障分析;光子发射;PICA;热激光刺激（TLS）;软缺陷定位（SDL）;OBIRCH;TIVA;LADA;电路编辑;聚焦离子束（FIB）;

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New physical techniques for IC functional analysis of on-chip devices and interconnects

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