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Depth profile and interface analysis in the nm-range

机译:纳米范围内的深度剖面和界面分析

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In modem technology, thin films are shrinking more and more to a thickness of few nanometers. Analytical investigations of such thin films using the traditional sputter depth profiling, sputtering in combination with surface-analytical techniques, have limitations due to physical effects especially for very thin films. These limitations are pointed out and some alternatives are discussed. Non-destructive analysis with angle-resolved X-ray photoelectron spectroscopy is demonstrated to be a useful method for such investigations. Both qualitative and quantitative results can be obtained even for complex layer structures. Nevertheless, there are also limitations of this method and some alternatives or complementary methods are considered. (c) 2005 Elsevier B.V. All rights reserved.
机译:在现代技术中,薄膜越来越多地收缩到几纳米的厚度。使用传统的溅射深度分析,溅射与表面分析技术相结合的这种薄膜的分析研究由于物理效应而存在局限性,尤其是对于非常薄的薄膜。指出了这些限制,并讨论了一些替代方法。角分辨X射线光电子能谱的无损分析被证明是这种研究的有用方法。即使对于复杂的层结构,也可以获得定性和定量结果。然而,这种方法也有局限性,可以考虑一些替代方法或补充方法。 (c)2005 Elsevier B.V.保留所有权利。

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