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首页> 外文期刊>Applied Surface Science >Comparing the chemical properties of evaporated and sputtered niobium films on oxidized Si(100) wafers - preparation of oxynitride films
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Comparing the chemical properties of evaporated and sputtered niobium films on oxidized Si(100) wafers - preparation of oxynitride films

机译：比较氧化的Si（100）晶片上蒸发和溅射的铌膜的化学性质-氧氮化物膜的制备

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Five hundred nanometers of niobium films have been deposited on silicon(1 0 0) wafers with 100 or 300 nm thermally grown oxide by electron beam evaporation and DC magnetron sputtering. SEM and AFM investigations revealed smaller crystallites and rougher surfaces for the evaporated films. The differences in film morphology resulted in lower reflection intensities in XRD for the as-deposited evaporated films. In order to investigate the influence of the structural properties on their chemical reactivities, in a first set of experiments the films were nitrided with molecular nitrogen by rapid thermal processing (RTP) at varying temperatures. In another set of experiments after nitridation in nitrogen at 1000 degrees C an oxidation step in molecular oxygen at varying temperatures followed. The films showed different reactivities, leading to different rates of nitridation and oxidation. Sputtered films were less reactive than the evaporated films, deduced from the sequence of reaction products dependent on reaction temperature. XRD data indicated that oxynitrides have formed. Elemental depth profiles were measured by secondary ion mass spectrometry (SIMS). (c) 2005 Elsevier B.V. All rights reserved.
机译：通过电子束蒸发和直流磁控溅射，在具有100或300 nm热生长氧化物的硅（1 0 0）晶片上沉积了500纳米铌膜。扫描电镜和原子力显微镜研究表明，蒸发薄膜的晶粒较小，表面较粗糙。薄膜形态的差异导致沉积的蒸发薄膜的XRD反射强度降低。为了研究结构性质对其化学反应性的影响，在第一组实验中，通过在不同温度下通过快速热处理（RTP）将膜与分子氮氮化。在另一组实验中，在1000摄氏度的氮气中氮化后，接着在不同温度下进行分子氧的氧化步骤。薄膜显示出不同的反应性，导致不同的氮化和氧化速率。从反应产物的顺序（取决于反应温度）推导得出，溅射薄膜的反应性不如蒸发薄膜。 XRD数据表明已形成氮氧化物。元素深度分布通过二次离子质谱（SIMS）测量。 （c）2005 Elsevier B.V.保留所有权利。

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