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首页> 外文期刊>Applied Surface Science >Crystallization kinetics of amorphous SiC films: Influence of substrate
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Crystallization kinetics of amorphous SiC films: Influence of substrate

机译：非晶SiC薄膜的结晶动力学：基片的影响

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The crystallization kinetics of amorphous silicon carbide films was studied by means of X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The films were deposited by radio frequency (r.f.) magnetron sputtering on glassy carbon and single crystalline silicon substrates, respectively. TEM micrographs and XRD patterns show the formation of nanocrystalline beta-SiC with crystallite sizes in the order of 50 nm during annealing at temperatures between 1200 and 1600 degrees C. A modified Johnson-Mehl-Avrami-Kolmogorov (JMAK) formalism was used to describe the isothermal transformation of amorphous SiC into beta-SiC as an interface controlled, three-dimensional growth processes from pre-existing small crystallites in the order of 10 nm. These pre-existing crystallites are formed in a transient process in the early stages of crystallization. For films deposited on the silicon substrate, the obtained rate constants of crystallite growth obey an Arrhenius behavior with an activation enthalpy of 4.1 +/- 0.5 eV in accordance with literature data. Films deposited on glassy carbon show an increased stability of amorphous SiC films, which is reflected in smaller rate constants of crystallite growth of several orders of magnitude at low temperatures and a higher activation enthalpy of 8.9 +/- 0.9 eV. A model is proposed, where the faster crystallization of films on silicon substrates can be explained with the presence of superabundant point defects, which diffuse from the substrate into the film and accelerate the incorporation of atoms from the amorphous into the crystalline phase. (c) 2005 Elsevier B.V. All rights reserved.
机译：通过X射线衍射（XRD）和透射电子显微镜（TEM）研究了非晶碳化硅薄膜的结晶动力学。通过射频（r.f.）磁控溅射将膜分别沉积在玻璃碳和单晶硅衬底上。 TEM显微照片和XRD图谱表明，在1200至1600摄氏度的温度下退火过程中，形成了晶粒尺寸为50 nm的纳米晶β-SiC。使用改良的Johnson-Mehl-Avrami-Kolmogorov（JMAK）形式描述非晶态SiC的等温转变，作为界面控制的，从预先存在的10纳米数量级的小晶粒进行的三维生长过程。这些预先存在的微晶在结晶的早期阶段以短暂的过程形成。对于沉积在硅衬底上的膜，根据文献数据，获得的微晶生长速率常数服从阿仑尼乌斯行为，其激活焓为4.1 +/- 0.5 eV。沉积在玻璃碳上的薄膜显示出增加的非晶SiC薄膜的稳定性，这反映为低温下几个数量级的微晶生长速率常数较小，而活化焓较高，为8.9 +/- 0.9 eV。提出了一个模型，其中可以解释存在超大量点缺陷的硅衬底上薄膜的更快结晶，该点缺陷从衬底扩散到薄膜中，并加速原子从非晶态进入结晶相的结合。 （c）2005 Elsevier B.V.保留所有权利。

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