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Modified Poole-Frenkel mechanisms in Ge25BixSb15-xS60 thin films

机译:Ge25BixSb15-xS60薄膜中的修正Poole-Frenkel机理

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The current-voltage (I-V) characteristics of amorphous Ge25BixSb15-xS60 (x = 0, 5, 10 and 15) thin film samples sandwiched between metal electrodes have been investigated as a function of composition, deposition rate (0.61-2.65 nm s(-1)), film thickness (128.6-598.2 nm) and temperature (130-373 K). The current-voltage characteristics are ohmic in the lower field regime followed by non-ohmic behavior in the higher voltage regime, which has been satisfactorily explained by the modified Poole-Frenkel effect. The experimentally determined values of Poole-Frenkel factor (beta(PF)) for different film composition, deposition rate and thicknesses are in good agreement with the theoretically calculated values. Fitting the room temperature data with Jonscher's field-independent re-trapping model is an indication that a modified Poole-Frenkel process is operating. The Hall model can account for the low-temperature dielectric constant, and gives an indication of modified Poole-Frenkel emission. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 24]
机译:研究了夹在金属电极之间的非晶Ge25BixSb15-xS60(x = 0、5、10和15)薄膜样品的电流-电压(IV)特性,它是成分,沉积速率(0.61-2.65 nm s(- 1)),薄膜厚度(128.6-598.2 nm)和温度(130-373 K)。电流-电压特性在较低的电场状态下为欧姆,然后在较高电压的状态下为非欧姆行为,这已通过改进的Poole-Frenkel效应得到令人满意的解释。实验确定的针对不同膜组成,沉积速率和厚度的Poole-Frenkel因子(beta(PF))与理论计算值非常吻合。将室温数据与Jonscher的独立于现场的重捕集模型拟合,表明正在运行改良的Poole-Frenkel工艺。霍尔模型可以说明低温介电常数,并给出修正的Poole-Frenkel发射的指示。 (C)2002 Elsevier Science B.V.保留所有权利。 [参考:24]

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