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首页> 外文期刊>Applied Surface Science >Photoluminescence of ZnO films excited with light of different wavelength
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Photoluminescence of ZnO films excited with light of different wavelength

机译：不同波长的光激发的ZnO薄膜的光致发光

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摘要

Different photoluminescence (PL) spectra were observed for rf sputtered ZnO films when excited with light of different wavelength. When the wavelength of the excitation light was 270 nm, a UV emission peak (356 nm) and a blue peak (446 nm) were generated for the films on sapphire, silicon and quartz substrates. For the films on glass substrates only the 446 nm blue emission appeared. With increasing the wavelength of the excitation light up to 300 and 320 nm, the UV emission disappeared for films on various substrates and the wavelength of the PL peaks increased up to 480 and 510 nm, respectively. When the wavelength of the excitation light increased to 340-395 nm, the PL spectrum became a wide band which was consistent with three emission peaks. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 18]
机译：当用不同波长的光激发时，射频溅射的ZnO薄膜观察到不同的光致发光（PL）光谱。当激发光的波长为270 nm时，在蓝宝石，硅和石英基板上的薄膜会产生UV发射峰（356 nm）和蓝峰（446 nm）。对于玻璃基板上的薄膜，仅出现446 nm的蓝色发射。随着激发光的波长增加到300和320 nm，各种基材上的膜的紫外线发射消失，PL峰的波长分别增加到480和510 nm。当激发光的波长增加到340-395 nm时，PL光谱变为宽带，与三个发射峰一致。 （C）2002 Elsevier Science B.V.保留所有权利。 [参考：18]

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