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Influence of laser fluence in ArF-excimer laser assisted crystallisation of a-SiGe:H films

机译:激光能量密度对a-SiGe:H薄膜的ArF准分子激光辅助结晶的影响

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摘要

Polycrystalline silicon germanium (poly-SiGe) coatings are drawing increasing attention as active layers in solar cells, bolometers and various microelectronic devices. As a consequence, alternative low-cost production techniques, capable to produce such alloys with uniform and controlled grain size, become more and more attractive. Excimer laser assisted crystallisation, already assessed in thin film transistor production, has proved to be a valuable "low-thermal budget" technique for the crystallisation of amorphous silicon. Main advantages are the high process quality and reproducibility as well as the possibility of tailoring the grain size in both, small selected regions and large areas. The feasibility of this technique for producing poly-SiGe films has been studied irradiating hydrogenated amorphous SiGe films with spatially uniform ArF-laser pulses of different fluences. Surface morphology, structure and chemical composition have been extensively characterised, demonstrating the need of using a "step-by-step" process and a careful adjustment of both, total number of shots and laser fluence at each "step" in order to diminish segregation effects and severe damages of the film surface and of segregation effects.
机译:多晶硅锗(poly-SiGe)涂层作为太阳能电池,辐射热计和各种微电子设备中的活性层越来越受到关注。结果,能够生产具有均匀且受控的晶粒尺寸的此类合金的替代低成本生产技术变得越来越有吸引力。准分子激光辅助结晶已经在薄膜晶体管生产中进行了评估,已被证明是用于非晶硅结晶的一种有价值的“低热预算”技术。主要优点是高工艺质量和可重复性,以及在较小的选定区域和较大的区域中都可以调整晶粒尺寸的可能性。已经研究了该技术用于生产多晶硅-GeGe膜的可行性,该方法是使用空间通量不同的ArF激光脉冲辐照氢化非晶SiGe膜。表面形貌,结构和化学成分已得到广泛表征,这表明需要使用“逐步”工艺,并仔细调整每个“步骤”的总发射数量和激光通量,以减少偏析。薄膜表面和偏析的影响和严重破坏。

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