Ion beam-induced nanostructuring of A(III)B(V) semiconductor surfaces studied with dynamic force microscopy and Kelvin probe force spectroscopy

Krok F.; Kolodziej J.; Such B.; Piatkowski P.; Szymonski M.

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Ion beam-induced nanostructuring of A(III)B(V) semiconductor surfaces studied with dynamic force microscopy and Kelvin probe force spectroscopy

机译：离子束诱导的A（III）B（V）半导体表面纳米结构的动态力显微镜和开尔文探针力谱研究

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Evolution and structuring of InSb(0 0 1) surface due to ion bombardment has been studied with dynamic force microscopy (DFM) and Kelvin probe force spectroscopy (KPFS) in UHV. Clean surface of InSb(0 0 1) composed of large, atomically flat terraces was obtained by repetitive cycles of low energy ion bombardment and annealing. DFM images revealed that the surface was composed of dimer rows arranged along the (1 1 0) crystallographic direction. The InSb surface prepared as above was subsequently irradiated, at room temperature with 4 keV Ar+ ions at oblique incidence. As a result, wire-like structures were produced which are parallel to the projection of the ion beam on the irradiated surface. The wires with the width of 50-60 nm and the length up to few microns were incorporated into a flat amorphous substrate. KPFS was used to determine the local surface potential on the substrate and along the wires. The surface potential was determined with respect to the work function of the polycrystalline An film grown on mica. (C) 2003 Elsevier Science B.V. All rights reserved. [References: 16]

机译：利用超高压中的动态力显微镜（DFM）和开尔文探针力谱（KPFS）研究了由于离子轰击引起的InSb（0 0 1）表面的演化和结构化。通过重复的低能离子轰击和退火循环，获得了由大的原子平坦的台阶组成的InSb（0 0 1）清洁表面。 DFM图像显示该表面由沿（1 1 0）晶体学方向排列的二聚体行组成。随后在室温下以倾斜入射的方式用4 keV Ar +离子辐照如上制备的InSb表面。结果，产生了线状结构，其平行于离子束在被照射表面上的投影。将宽度为50-60 nm，长度最大为几微米的导线合并到一个平坦的非晶态基板中。 KPFS用于确定基材和沿导线的局部表面电势。相对于在云母上生长的多晶An膜的功函数确定表面电势。（C）2003 Elsevier Science B.V.保留所有权利。 [参考：16]

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《Applied Surface Science》 |2003年第2期|p. 112-116|共5页
作者
Krok F.; Kolodziej J.; Such B.; Piatkowski P.; Szymonski M.;
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正文语种 eng
中图分类应用物理学;
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Dynamic force microscopy; Kelvin probe force spectroscopy; Ion-induced processes; A(iii)b(v) semiconductors; Bombardment; Inp;

机译：动态力显微镜开尔文探针力光谱法;离子诱导过程;A（iii）b（v）半导体;轰击;输入值;

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机译：Ge表面金饰的高度有序自组织光栅状纳米结构：开尔文探针力显微镜和导电原子力显微镜研究
2. Ion beam-induced nanostructuring of InSb(0 0 1) surfaces studied with atomic force microscopy [J] . F. Krok, J.J. Kolodziej, B. Such, Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms . 2003,第Dec期

机译：原子力显微镜研究离子束诱导的InSb（0 0 1）表面纳米结构
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Ion beam-induced nanostructuring of A(III)B(V) semiconductor surfaces studied with dynamic force microscopy and Kelvin probe force spectroscopy

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