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首页> 外文期刊>Applied Surface Science >Surface electromigration of In-covered Si high-index surfaces
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Surface electromigration of In-covered Si high-index surfaces

机译：In覆盖的Si高折射率表面的表面电迁移

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摘要

To clarify the role of facet in electromigration on the vicinal Si(0 0 1), we investigated in this study surface mass transport of In on Si high-index (1 0 3) and vicinal (0 0 1) surfaces, using scanning Auger microscope, low energy electron diffraction (LEED) and atomic force microscope (AFM). In parallel with (1 0 3), we also investigated similarly the most stable high-index (1 1 3) of Si for reference. Specimens with a large area of these surfaces were prepared from Si(0 0 1) wafer by cutting, grinding and polishing. No surface electromigration of In on Si(l 0 3) surface was observed at any temperature, while In overlayer exhibited a typical Stranski―Krastanov mode of growth. This fact strongly suggests that In adatoms move around over the intermediate layer, but there is no driving force of electromigration on them. The electromigration on the vicinal Si(0 0 1) depended upon the off-angle. It was most enhanced with the off-angle of around 4°. Based upon these results a model is proposed to explain the puzzling electromigration of In on vicinal Si(0 0 1). We found out that In on Si(1 1 3) exhibited a normal surface electromigration towards cathode.
机译：为了阐明刻面在邻近Si（0 0 1）上电迁移中的作用，我们在本研究中使用扫描俄歇（Auger）扫描研究了In在Si高指数（1 0 3）和邻近（0 0 1）表面上的In的表面质量传输。显微镜，低能电子衍射（LEED）和原子力显微镜（AFM）。与（1 0 3）并行，我们还类似地研究了最稳定的高折射率Si（1 1 3），以供参考。由Si（0 0 1）晶片通过切割，研磨和抛光来制备具有这些表面的较大面积的样品。在任何温度下均未观察到In在Si（l 0 3）表面上的表面电迁移，而In覆盖层表现出典型的Stranski-Krastanov生长模式。这一事实强烈表明In原子在中间层上四处移动，但是在它们之上没有电迁移的驱动力。 Si（0 0 1）上的电迁移取决于偏角。大约4°的倾斜角可以最大程度地增强它。基于这些结果，提出了一个模型来解释In在邻近Si（0 0 1）上令人费解的电迁移。我们发现，Si（1 1 3）上的In表现出向阴极的正常表面电迁移。

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