Si(1 1 1) step fluctuations in reflection electron microscopy at 1100℃: anomalous step―step repulsion

Robert D. Schrolf; Saul D. Cohen; T.L. Einstein; J.-J. Metois; Hailu Gebremariam; Howard L. Richards; Ellen D. Williams

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Si(1 1 1) step fluctuations in reflection electron microscopy at 1100℃: anomalous step―step repulsion

机译：1100℃反射电子显微镜中Si（1 1 1）阶跃波动：异常阶跃-阶跃排斥

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Using reflection electron microscopy (REM) we study step fluctuations of Si(1 1 1) at 1100 ℃. Sublimation is compensated by flux from a nearby crystal. The fluctuation behavior is qualitatively like that at 900℃ (where evaporation is negligible), with unexplained quantitative differences. Regarding the three parameters of the step continuum model of vicinal surfaces, the step stiffness is about half that at 900℃, in agreement with theory. Step repulsions are at least six times as strong as predicted from 900℃, suggesting non-equilibrium effects probably due to electromigration from the heating current. Temporal correlations have a large initial offset (due to slow scanning relative to fluctuations) but show scaling behavior.

机译：使用反射电子显微镜（REM），我们研究了Si（1 1 1）在1100℃下的阶跃波动。通过附近晶体的通量补偿升华。该波动行为在定性上类似于在900℃（蒸发可忽略不计）下的波动行为，具有无法解释的定量差异。关于相邻表面台阶连续模型的三个参数，台阶刚度约为900℃时的一半，与理论一致。阶跃排斥力至少是900℃预测值的六倍，表明非平衡效应可能是由于加热电流引起的电迁移所致。时间相关具有较大的初始偏移（由于相对于波动的缓慢扫描），但显示缩放行为。

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来源
《Applied Surface Science》 |2003年第5期|p.219-223|共5页
作者
Robert D. Schrolf; Saul D. Cohen; T.L. Einstein; J.-J. Metois; Hailu Gebremariam; Howard L. Richards; Ellen D. Williams;
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Department of Physics, University of Maryland, College Park, MD 20742-4111, USA;

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正文语种 eng
中图分类应用物理学;
关键词
vicinal single crystal surfaces; reflection electron microscopy; silicon; semiconducting surfaces; models of surface kinetics; equilibrium thermodynamics and statistical mechanics; evaporation; sublimation;

机译：相邻的单晶表面;反射电子显微镜;硅;半导体表面;表面动力学模型;平衡热力学和统计力学;蒸发;升华;

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Si(1 1 1) step fluctuations in reflection electron microscopy at 1100℃: anomalous step―step repulsion

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