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首页> 外文期刊>Applied Surface Science >SIMS characterization of hydrogen transport through SiO_2 by low-temperature hydrogen annealing
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SIMS characterization of hydrogen transport through SiO_2 by low-temperature hydrogen annealing

机译：低温氢退火的氢通过SiO_2的SIMS表征

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摘要

The variation of hydrogen distribution at the SiO_2/Si interface by low-temperature hydrogen annealing was investigated using secondary ion mass spectrometry (SIMS). As the amount of hydrogen atoms incorporated at SiO_2/Si is considered to be comparable to the silicon dangling bond density (1 x 10~(10) to 1 x 10~(12) atoms/cm~2), an analytical method with a high sensitivity is necessary for the detection of hydrogen at SiO_2/Si. In this study, the experimental conditions of SIMS were optimized in order to obtain a sufficient reproducibility of interfacial hydrogen ion intensity. There are two main causes that influence the measurement reproducibility: (1) misalignment of the relative irradiation areas of the electron beam and ion beam and (2) the contribution of background hydrogen from surface contaminants and residual gas. We obtained a high measurement reproducibility within a 5.5% relative standard deviation (2σ). This enabled us to observe an increase of hydrogen at SiO_2Si by hydrogen annealing at 400℃, which resulted from the incorporation of hydrogen from the ambient. From the results of nuclear reaction analysis (NRA) and thermal desorption spectroscopy (TDS), it was also found that the incorporated hydrogen had two chemical states.
机译：利用二次离子质谱法（SIMS）研究了通过低温氢退火在SiO_2 / Si界面上氢分布的变化。由于认为在SiO_2 / Si处掺入的氢原子数量可与硅悬空键密度（1 x 10〜（10）至1 x 10〜（12）原子/ cm〜2）相媲美，因此采用高灵敏度对于检测SiO_2 / Si中的氢是必需的。在这项研究中，优化了SIMS的实验条件，以便获得足够的界面氢离子强度重现性。影响测量重现性的主要原因有两个：（1）电子束和离子束的相对照射区域未对准；（2）表面污染物和残留气体对背景氢的贡献。我们在5.5％相对标准偏差（2σ）之内获得了很高的测量重现性。这使我们能够观察到由于在400℃下进行氢退火而导致的SiO_2Si处氢的增加，这是由于环境中氢的引入。从核反应分析（NRA）和热解吸光谱（TDS）的结果，还发现掺入的氢具有两个化学状态。

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