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Structural characterization of TiO_2/TiN_xO_y (δ-doping) heterostructures on (1 1 0)TiO_2 substrates

机译:(1 1 0)TiO_2基体上TiO_2 / TiN_xO_y(δ掺杂)异质结构的结构表征

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TiO_2/TiN_xO_y δ-doping structures were grown on the top of (1 1 0)TiO_2 rutile substrates by low pressure metal-organic vapor phase epitaxy (LP-MOVPE) technique at 750℃. The samples were analyzed by high resolution transmission electron microscopy (HRTEM), electron energy loss spectroscopy (EELS) and X-ray diffraction techniques (rocking curves and φ-scans). The presence of satellites in the (1 1 0)TiO_2 rocking curve revealed the epitaxial growth of 10 period δ-doping structures. The thickness of the TiO_2 layers, 84 nm, was deduced from the satellites period. HRTEM observations showed around 1.5 nm thick δ-doping layers, where the presence of nitrogen was detected by EELS. The analysis of the Bragg surface diffraction peaks observed in the φ-scans points to an almost negligible strain in this sample which was confirmed by substrate curvature radius measurements.
机译:通过低压金属有机气相外延(LP-MOVPE)技术在750℃条件下,在(1 1 0)TiO_2金红石基底的顶部生长了TiO_2 /TiN_xO_yδ掺杂结构。通过高分辨率透射电子显微镜(HRTEM),电子能量损失谱(EELS)和X射线衍射技术(摇摆曲线和φ扫描)分析样品。 (1 1 0)TiO_2摇摆曲线中卫星的存在表明10个周期δ掺杂结构的外延生长。从卫星周期推算出TiO_2层的厚度为84nm。 HRTEM观察显示约1.5 nm厚的δ掺杂层,其中EELS检测到氮的存在。在φ扫描中观察到的布拉格表面衍射峰的分析表明,该样品中的应变几乎可以忽略不计,这通过基底曲率半径测量得到了证实。

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