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首页> 外文期刊>Applied Surface Science >The role of microstructure in nanocrystalline conformal Co_(0.9)W_(0.02)P_(0.08) diffusion barriers for copper metallization
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The role of microstructure in nanocrystalline conformal Co_(0.9)W_(0.02)P_(0.08) diffusion barriers for copper metallization

机译：微观结构在铜金属化纳米共形Co_（0.9）W_（0.02）P_（0.08）扩散阻挡层中的作用

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摘要

Electroless deposition of diffusion barriers for Cu metallization is an attractive process as it is selective, deposits conformal films at a low temperature and enables seedless Cu deposition. We demonstrate electroless deposition of conformal, ultra-thin (～10 nm thick) films of Co_(0.9)W_(0.02)P_(0.08). ElectrolessCo_(0.9)W_(0.02)P_(0.08) is an effective barrier against Cu diffusion up to 450℃ as opposed to physical vapor deposited (PVD) Co, which is a poor barrier. In this study, the role of microstructure in determining the barrier properties is discussed. The microstructure of the as-deposited layers consists of nanocrystallites of hexagonal close-packed (hcp) Co and an amorphous CoWP component. The amorphous component crystallizes at approximately 290℃ to hcp Co. The orthorhombic CO_2P phase nucleates at 420℃, while the majority phase remains hcp Co. Since we have found that up to 450℃ there is no phase formation between Cu and the Co_(0.9)W_(0.02)P_(0.08) film, we conclude that the mechanism of barrier failure is grain boundaries diffusion. The dependance of Cu grain boundary diffusivity on the microstructure is qualitatively demonstrated by comparing between electroless deposited Co_(0.9)W_(0.02)P_(0.08), Co_(0.9)P_(0.1) and PVD cobalt. Secondary ion mass spectrometry depth profile measurements were performed on the films after subjecting them to anneals at 400℃ resulting in type-C Cu grain boundary diffusion. The Cu diffusivity in the Co_(0.9)W_(0.02)P_(0.08) film is lower than in Co_(0.9)P_(0.1), and substantially lower than in PVD Co. The difference in Cu diffusivity is explained by varying degrees of grain boundaries' passivation due to the P and W alloying elements enriching the grain boundaries. This passivation effect is more pronounced in the Co_(0.9)W_(0.02)P_(0.08) films.
机译：用于铜金属化的扩散阻挡层的化学沉积是一个有吸引力的过程，因为它具有选择性，可以在低温下沉积保形膜，并可以进行无籽铜沉积。我们证明了Co_（0.9）W_（0.02）P_（0.08）的保形，超薄（约10 nm厚）膜的化学沉积。化学镀Co_（0.9）W_（0.02）P_（0.08）是对Cu扩散至450℃的有效阻挡层，而物理气相沉积（PVD）Co则是较差的阻挡层。在这项研究中，讨论了微结构在确定阻隔性能中的作用。沉积层的微观结构由六方密堆积（hcp）Co和非晶CoWP组分的纳米微晶组成。非晶态组分在大约290℃时结晶为hcpCo。正交晶CO_2P相在420℃时成核，而大多数相仍为hcpCo。由于我们发现在450℃以下，Cu与Co_（0.9 ）W_（0.02）P_（0.08）膜，我们得出的结论是，势垒破坏的机理是晶界扩散。通过化学沉积Co_（0.9）W_（0.02）P_（0.08），Co_（0.9）P_（0.1）和PVD钴之间的比较，定性地证明了Cu晶界扩散率对显微组织的依赖性。薄膜在400℃退火后进行二次离子质谱深度分布测量，从而导致C型Cu晶界扩散。 Co_（0.9）W_（0.02）P_（0.08）膜中的Cu扩散率低于Co_（0.9）P_（0.1）中的Cu扩散率，并且远低于PVD Co中的Cu扩散率。 P和W合金元素丰富了晶界，使晶界钝化。这种钝化效果在Co_（0.9）W_（0.02）P_（0.08）薄膜中更为明显。

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