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首页> 外文期刊>Applied Surface Science >Thermally induced changes in cluster-assembled carbon nanocluster films observed via photoelectron spectroscopy
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Thermally induced changes in cluster-assembled carbon nanocluster films observed via photoelectron spectroscopy

机译：通过光电子能谱观察到的热诱导簇组装的碳纳米团簇膜的变化

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摘要

We have exploited the possibility of obtaining SiC by annealing at selected increasing temperatures cluster-assembled carbon films deposited in situ by a supersonic beam onto Si(1 0 0)-(2 x 1) substrates. We measured the evolution of the valence bands and of the Si 2p and C 1 s core level spectra to monitor the thermal induced effects in the atomic concentrations and the electronic structure at the interface. Our results indicate that at the interface Si―C bonds are already formed at 700℃, a temperature that is significantly lower (≈50℃) than found in literature by using other C-based precursors for SiC growth on Si surfaces. Supersonic carbon cluster beam deposition seems to be promising for the growth of SiC films on Si surfaces with improved interface quality.
机译：我们已经开发了通过在选定的升高温度下退火获得SiC的可能性，该簇生碳膜通过超声束在原位沉积到Si（1 0 0）-（2 x 1）衬底上。我们测量了价带以及Si 2p和C 1 s原子能级谱的演化，以监测原子浓度和界面电子结构的热诱导效应。我们的研究结果表明，在界面处已经在700℃形成了Si-C键，该温度明显低于文献中使用其他C基前驱体在Si表面生长SiC的温度（≈50℃）。超声碳簇束沉积对于提高表面质量的Si表面上SiC膜的生长似乎很有希望。

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