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首页> 外文期刊>Applied Surface Science >Using MeV ion backscattering/channeling and MC simulations to characterize the composition and structure of buried metal-metal interfaces
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Using MeV ion backscattering/channeling and MC simulations to characterize the composition and structure of buried metal-metal interfaces

机译：使用MeV离子反向散射/通道和MC模拟来表征埋藏的金属-金属界面的组成和结构

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The technique of MeV ion backscattering and channeling has been used to study the interface structure and stoichiometry for thin transition metal films deposited on Al single crystal surfaces. Analysis of the backscattering data is based on the concepts of shadowing and the well-known theory of Rutherford scattering. In some cases we have used X-ray photoemission spectroscopy (XPS), low-energy (keV) He+ ion scattering spectroscopy, and Monte Carlo computer simulations of interface evolution to obtain additional information about the structure of buried inter-faces. We first describe the growth of epitaxial fcc Ti films on Al single crystal surfaces, and alloy formation at the epitaxial Ag-Al interface. We next describe measurements for alloy formation at the Ni-Al(I 1 0) interface and present Monte Carlo simulations of the interface evolution. Finally, we describe an approach to stabilize metal-metal epitaxial interfaces using an extremely thin metallic interlayer. Specifically, we show that a single ML of Ti metal deposited at the Fe-Al interface, a system well known for considerable intermixing at room temperature, prevents interdiffusion and enables the epitaxial growth of Fe films on the AI(I 0 0) surface. The resulting structure is observed to be stable for temperatures up to about 200 degreesC. (C) 2003 Elsevier Science B.V. All rights reserved. [References: 25]
机译：MeV离子反向散射和沟道技术已用于研究沉积在Al单晶表面上的过渡金属薄膜的界面结构和化学计量。反向散射数据的分析基于阴影的概念和著名的卢瑟福散射理论。在某些情况下，我们使用了X射线光电子能谱（XPS），低能（keV）He +离子散射光谱和界面演化的蒙特卡罗计算机模拟来获得有关掩埋界面结构的其他信息。我们首先描述外延fcc Ti膜在Al单晶表面上的生长以及在外延Ag-Al界面处的合金形成。接下来，我们描述在Ni-Al（I 1 0）界面处合金形成的测量，并介绍界面演化的蒙特卡洛模拟。最后，我们描述了一种使用极薄的金属夹层来稳定金属-金属外延界面的方法。具体而言，我们表明，沉积在Fe-Al界面上的单个ML金属（众所周知的在室温下大量混合的系统）可防止相互扩散，并能在Al（I 0 0）表面上外延生长Fe膜。观察到所得的结构在高达约200℃的温度下是稳定的。 （C）2003 Elsevier Science B.V.保留所有权利。 [参考：25]

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