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Surface compositional changes in GaAs subjected to argon plasma treatment

机译：氩气等离子体处理的砷化镓表面成分变化

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X-ray photoelectron spectroscopy (XPS) has been employed to study surface compositional changes in GaAs (1 0 0) subjected to argon plasma treatment. The experimental results have been explained in terms of predicted argon ion energies, measured ion densities and etch rates. A model is proposed for the processes taking place at the surface of GaAs in terms of segregation, sputtering and surface relaxation. Stopping and range of ions in matter (SKIM) code [1] has also been employed as an aid to identification of the mechanisms responsible for the compositional changes. Argon plasma treatment induced surface oxidation at very low energies and sputtering and surface damage with increasing energy. (C) 2002 Published by Elsevier Science B.V. [References: 21]
机译：X射线光电子能谱（XPS）已用于研究经过氩等离子体处理的GaAs（1 0 0）的表面成分变化。实验结果已经根据预测的氩离子能量，测得的离子密度和蚀刻速率进行了解释。针对偏析，溅射和表面弛豫，提出了一种针对GaAs表面发生的过程的模型。物质中离子的终止和作用范围（SKIM）代码[1]也已被用来帮助识别造成成分变化的机制。氩等离子体处理在非常低的能量下引起表面氧化，并随着能量的增加而溅射和破坏表面。 （C）2002由Elsevier Science B.V.出版[参考文献：21]

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