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Laser processing of silicon for photovoltaics and structural phase transformation

机译：光伏硅的激光加工和结构相变

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High-power nanosecond-pulse-width laser processing is attracting increasing attention for the manufacturing of low-cost high-performance silicon photovoltaic and microelectronic devices. However, the lack of fundamental understanding of laser induced defect formation and phase transformation hinders the broader application of lasers. To address this, we systematically investigated the laser-induced phase transformation using different laser systems of 532 nm wavelength, 1.3 ns pulse width and 1064 nm wavelength, 50 ns pulse width. In doing this, we carried out cross-sectional transmission electron microscopy (TEM) and Raman spectroscopy line-mapping studies to analyze the local phase information across the laser processed spot. We demonstrate the retention of single-crystalline phase under 1.64 J/cm(2) fluence using a 532 nm wavelength laser. This retention of single-crystalline phase is important for ensuring high effective carrier lifetime and hence high photovoltaic conversion efficiency. Moreover, the 1064 nm wavelength laser processed samples under increasing fluences showed a phase evolution from crystalline to amorphous/polycrystalline transformation. After 1064 nm laser processing above 1.47 J/cm(2) fluences, microtwins with dislocations were observed, in addition to increasing expansion stress. Additionally, the appearance of extra spots in the (3 1 1) diffraction ring pattern obtained by TEM studies of samples processed at 1.60 J/cm(2) fluence using a 1064 nm laser, demonstrates the generation of a high density of dislocations.
机译：高功率纳秒脉冲宽度激光加工在制造低成本高性能硅光伏和微电子器件方面引起了越来越多的关注。但是，对激光诱导的缺陷形成和相变缺乏基本的了解，阻碍了激光的广泛应用。为了解决这个问题，我们系统地研究了使用532 nm波长，1.3 ns脉冲宽度和1064 nm波长，50 ns脉冲宽度的不同激光系统的激光诱导的相变。为此，我们进行了截面透射电子显微镜（TEM）和拉曼光谱线映射研究，以分析整个激光加工点上的局部相位信息。我们展示了使用532 nm波长激光在1.64 J / cm（2）能量密度下的单晶相保留。单晶相的这种保留对于确保高有效载流子寿命并因此确保高光电转换效率很重要。此外，在注量增加的情况下，经过1064 nm波长激光处理的样品显示出从晶体到非晶/多晶转变的相变。在高于1.47 J / cm（2）的能量密度进行1064 nm激光处理后，除了增加膨胀应力外，还观察到了具有位错的微孪晶。此外，通过使用1064 nm激光在1.60 J / cm（2）能量通量下处理的样品的TEM研究获得的（3 1 1）衍射环图案中出现了额外的斑点，证明了高位错密度的产生。

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