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首页> 外文期刊>Applied Surface Science >Temperature-dependent photoluminescence properties of C(carbon)-aided ZnO nanorod arrays on (100) Si substrate
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Temperature-dependent photoluminescence properties of C(carbon)-aided ZnO nanorod arrays on (100) Si substrate

机译：（100）硅衬底上C（碳）辅助的ZnO纳米棒阵列的温度依赖性光致发光特性

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摘要

We investigate the photoluminescence (PL) spectra of ZnO nanorod (NR) and C(carbon)-aided NR arrays from 10 to 300 K. The activation energy of the donor-bound exciton of the ZnO NRs was determined to be 11.3 meV ranging over 10-300 K. The decreasing behavior of the PL intensity for the C(carbon)-aided ZnO NRs exhibited two activation energies, i.e., 3.2 and 65.8 meV at T < 70 K and T > 70 K, respectively. The activation energy for the donor-bound exciton decreased because of stronger quantum confinement in the C(carbon)-aided ZnO NRs than that of the ZnO NRs. We attribute these results to lower lattice mismatch, a larger surface-to-volume ratio, and the dense structure of the vertically orientated hexagonal pillars with flat faceted surfaces in the C(carbon)-aided ZnO NRs. A considerable exciton binding energy of 65.8 meV from the C(carbon)-aided ZnO NR arrays produced luminescence stably at 300 K. In addition, PL spectra demonstrated that the luminescence intensities of the C(carbon)-aided ZnO NRs were higher than that of the ZnO NRs because of weak exciton-phonon coupling. The higher PL intensities of the C(carbon)-aided ZnO NRs suggest that these structures might feature improved performance in optoelectronic nano-devices manufactured from ZnO NRs.
机译：我们研究了从10到300 K的ZnO纳米棒（NR）和C（碳）辅助NR阵列的光致发光（PL）光谱。确定ZnO NRs的供体结合激子的活化能为11.3 meV，范围为10-300K。C（碳）辅助的ZnO NR的PL强度的下降行为表现出两种活化能，分别在T <70 K和T> 70 K时分别为3.2和65.8 meV。供体结合的激子的活化能降低，这是因为在C（碳）辅助的ZnO NRs中，量子约束比ZnO NRs强。我们将这些结果归因于较低的晶格失配，较大的表面积与体积比以及在C（碳）辅助的ZnO NR中具有垂直平面的垂直取向六边形柱的致密结构。 C（碳）辅助的ZnO NR阵列的激子结合能为65.8 meV，在300 K下稳定产生发光。此外，PL光谱表明C（碳）辅助的ZnO NR的发光强度高于C（碳）辅助的ZnO NR。 ZnO NRs的激子-声子耦合较弱。 C（碳）辅助的ZnO NR的较高PL强度表明，这些结构在以ZnO NRs制造的光电纳米器件中可能具有改善的性能。

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