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首页> 外文期刊>Applied Surface Science >Large-area adlayer-free single-layer h-BN film achieved by controlling intercalation growth
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Large-area adlayer-free single-layer h-BN film achieved by controlling intercalation growth

机译：通过控制插层生长实现大面积无添加剂单层h-BN膜

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摘要

Controllable wafer-scale growth is one of the ultimate goals in two-dimensional (2D) h-BN synthesis, which is not fully accomplished to date. One of critical issues is the formation of three-dimensional (3D) islands (adlayers) within 2D layers, thus the films are non-uniform in thickness. In this paper, we present a study of h-BN adlayer growth and provide a strategy towards eliminating these adlayers for the precise control of the number of 2D layers. By varying the growth parameters such as substrate property, nitrogen source composition, and substrate carburization time, we found that the adlayer growth can be controlled by controlling the nucleation and intercalation processes, which is achieved by engineering the defects and impurities on substrate and the activeness of the h-BN edges. While crystallographic defects and impurities stimulate the multilayer nucleation process, activated edge tends to turn off the intercalation process by reducing the probability of precursors penetrating into the interface. We have achieved the growth of a large-area adlayer-free single-layer h-BN film.
机译：可控的晶圆级生长是二维（2D）h-BN合成的最终目标之一，迄今为止尚未完全实现。关键问题之一是在2D层中形成三维（3D）岛（附加层），因此膜的厚度不均匀。在本文中，我们对h-BN层的生长进行了研究，并提供了消除这些层的策略，以精确控制2D层的数量。通过改变诸如衬底性质，氮源组成和衬底渗碳时间之类的生长参数，我们发现可以通过控制成核和嵌入过程来控制吸附层的生长，这是通过对衬底上的缺陷和杂质以及活性进行改造而实现的。 h-BN边缘的数量。虽然晶体学缺陷和杂质会刺激多层成核过程，但活化边缘往往会通过降低前驱物渗入界面的可能性来关闭插层过程。我们已经实现了大面积无添加剂单层h-BN膜的生长。

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