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Strong terahertz emission from copper oxides/silver micro thin film deposited on nanoparticles aggregation substrate

机译:沉积在纳米粒子聚集基板上的氧化铜/银微薄膜的强太赫兹发射

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摘要

Terahertz emission properties of oxidized silver/copper micro thin film were investigated. Enhanced terahertz emission was observed from the oxidized micro thin film deposited on nanoparticles aggregation substrate due to the various directions of transient current surge. The amplitude of terahertz emission from the film was comparable to that from traditional non-external gallium arsenide. The sample, firstly, was synthesized by hydrothermal method to fabricate nanoparticles aggregation substrate. Next, the etched sample was treated by physical vapor deposition to grow silver/copper micro thin film and oxidized at 200 degrees C atmosphere environment. The space charge region was the dominant area for terahertz emission, built-in field at depletion layer played a key role in terahertz emission, and the contribution arising from optical rectification and photogalvanic was negligible due to the centrosymmetry structure; high band gap, low carriers concentration and mobility leads to the photon drag effect was not obvious; Because the differences of mobility and mass between hole and electron were not distinct, the Dember effect was also ineffective. The intensity of the terahertz emission was related to the thickness of the silver film because the silver film has a close relationship with the oxidation rate of the copper layer, leading to a dramatic influence on band gap structure, which produced a direct response on optical absorption at red zone. Compared with the planar substrate, the radiation of the nanoparticles substrate is 1.2 times that of the planar substrate, and the enhancement of the terahertz emission was ascribed to the various vibrated directions of photo-generated carriers. Our results could provide a potential portable terahertz emitter, which is economical, simple processing and operatable at room temperature.
机译:研究了氧化银/铜微薄膜的太赫兹发射特性。由于瞬态电流浪涌的各个方向,从沉积在纳米颗粒聚集基板上的氧化微薄膜观察到增强的太赫兹发射。薄膜中太赫兹发射的幅度与传统的非外部砷化镓相当。首先通过水热法合成样品,制备纳米颗粒聚集体。接下来,通过物理气相沉积处理蚀刻的样品以生长银/铜微薄膜并在200℃的大气环境下氧化。空间电荷区是太赫兹发射的主要区域,耗尽层的内置场在太赫兹发射中起关键作用,由于中心对称结构,光学整流和光电流的贡献可忽略不计。高带隙,低载流子浓度和迁移率导致光子拖曳效应不明显;由于空穴和电子之间的迁移率和质量差异不明显,因此Dember效应也无效。太赫兹发射的强度与银膜的厚度有关,因为银膜与铜层的氧化速率密切相关,从而对带隙结构产生巨大影响,对光吸收产生直接响应。在红色区域。与平面基板相比,纳米粒子基板的辐射是平面基板的辐射的1.2倍,并且太赫兹发射的增强归因于光生载流子的各种振动方向。我们的结果可以提供一种潜在的便携式太赫兹发射器,该发射器经济,简单,可在室温下操作。

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