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Impact of surface photovoltage on photoemission from Ni/p-GaN

机译：表面光电压对Ni / p-GaN的光发射的影响

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摘要

Surface studies on the Ni films on p-GaN concentrated on photoelectron spectroscopies are presented. We found the surface condition on which the surface photovoltage (SPV) effect, caused by an excitation source, leads to the appearance of a quasi-Fermi level located above the Fermi level of the electron energy analyzer. The energy shifts of core-level lines were also noted due to this. This means that for meta/semiconductor systems some energy shifts of peaks observed do not have to result from a chemical reaction and may be done through SPV effects. The formation of the interface, as well as its physicochemical and structural analysis, were carried out in situ under ultrahigh vacuum. Ni films were vapour deposited onto the Mg-doped GaN, (0 0 0 1)-oriented. X-ray and ultraviolet light sources were applied in photoemission experiments. The low-energy electron diffraction technique was employed for surface structure investigation.
机译：提出了在p-GaN上的Ni薄膜的表面研究，该研究集中在光电子能谱上。我们发现了由激发源引起的表面光电压（SPV）效应导致在电子能量分析仪的费米能级上方出现准费米能级的表面状况。因此也注意到了核心级线路的能量转移。这意味着对于超/半导体系统，观察到的峰的某些能量转移不一定是由化学反应引起的，而可以通过SPV效应来完成。在超高真空下原位进行界面的形成及其理化和结构分析。将Ni膜气相沉积到（0 0 0 1）取向的Mg掺杂的GaN上。 X射线和紫外光源被用于光发射实验。低能电子衍射技术用于表面结构研究。

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