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Near-threshold, steady state interaction of oxygen ions with transition metals: Sputtering and radiation enhanced diffusion

机译:近阈值,氧离子与过渡金属的稳态相互作用:溅射和辐射增强扩散

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Transition metals used in semiconductor, photolithography and fusion applications interact with low energy oxygen ions. Understanding erosion, the nature of the formed oxide and depth of oxygen transport is necessary in mitigating unexpected performance of sensors, optics or plasma facing components. Oxide formation is governed by both the ion-target combination and the incident ion energy. We study the interaction of the transition metals molybdenum, ruthenium, palladium and tungsten, with oxygen ions in the energy region of 50-500 eV. Near-threshold sputtering of metals was experimentally measured and compared to predictions by the Monte Carlo code TRIDYN. Compositional changes and oxide thicknesses following sputtering were measured using Angle resolved X-ray photoelectron spectroscopy and subsequently compared to limiting oxide formed by atomic oxygen exposures. Sputter yields in some cases (ruthenium) were found to be sensitive to ion beam impurities such as ozone (1% of background gas) leading to chemical sputtering. Ion induced oxide thicknesses (for molybdenum and tungsten) were found to be larger than those predicted by ballistic transport where sputtering is balanced by implantation. It is hypothesized that radiation enhanced diffusion of free oxygen leads to thicker oxide films at low ion energies.
机译:用于半导体,光刻和融合应用的过渡金属与低能量氧离子相互作用。了解侵蚀,在减轻传感器,光学或等离子体面向部件的意外性能方面是必要的,所形成的氧化物和氧气进度的性质。氧化物形成由离子靶组合和入射离子能量控制。我们研究过渡金属钼,钌,钯和钨的相互作用,在50-500eV的能量区域中具有氧离子。通过Monte Carlo Code Tridyn的预测进行实验测量金属的近阈值溅射。使用角度分辨的X射线光电子能谱测量溅射后的组成变化和氧化物厚度,并随后与由原子氧暴露形成的限制氧化物相比。发现溅射产率在某些情况下(钌)被发现对离子束杂质(例如导致化学溅射)的离子束杂质(如臭氧)敏感。发现离子诱导的氧化物厚度(用于钼和钨)大于弹道传输预测的氧化物厚度,其中溅射通过植入平衡溅射。假设辐射增强了游离氧的扩散导致低离子能量的较厚的氧化物膜。

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