• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied Surface Science >Probing quantum confinement effects on the excitonic property and electronic band structures of MoS_2
【24h】

Probing quantum confinement effects on the excitonic property and electronic band structures of MoS_2

机译：探测对MOS_2激子特性和电子频带结构的量子监禁效应

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We systemically investigate the effects of quantum confinement on the excitonic property and electronic band structures of centimeter-scale MoS2 films (number of layers: N = 1, 2, 4, and 18) through spectroscopic ellipsometry. The optical properties including optical conductivity, exciton binding energy and critical points (CPs) are traced as a function of layer number. We find that A and B excitons have the largest binding energies in monolayer MoS2 compared with the values in multilayer MoS2 because of the absence of interlayer coupling in former. Nevertheless, the peak positions of A and B excitons are almost the same, even when the layer number changes. This is because of the canceling out of differences between quasi-particle band gap and excitonic binding energy. Furthermore, the threshold energies of the eight CPs are calculated; using these values, the valence and conduction band alignments of the CPs are determined. It is noteworthy that the electronic band structures of MoS2 become stable when the layer number is more than four, which can be attributed to the largely weakened quantum confinement effect in these cases. The results of our study help us better understand the effect of quantum confinement on photoelectronic and photovoltaic applications using MoS2 films.
机译：通过光谱椭圆形测量，我们全系统地研究量子限制对厘米级MOS2薄膜（层数：N = 1,2,4和18）的激发性能和电子带结构的影响。包括光导率，激子结合能量和临界点（CPS）的光学性质被追踪为层数的函数。我们发现A和B Excitons在单层MOS2中具有最大的绑定能量，与多层MOS2中的值相比，因为在前以前的层间耦合没有。然而，即使层数发生变化，A和B Excitons的峰值位置几乎相同。这是因为取消了准粒子带隙和激发器结合能的差异。此外，计算八个CP的阈值能量;使用这些值，确定CP的价和导通带对准。值得注意的是，当层数超过四个时，MOS2的电子带结构变得稳定，这可以归因于这些情况下的大量削弱量子限制效果。我们的研究结果有助于我们更好地了解使用MOS2薄膜的量子限制对光电和光伏应用的影响。

著录项

  • 来源
    《Applied Surface Science》 |2020年第jul30期|146262.1-146262.8|共8页
  • 作者

    Zhu Xudan; Li Dahai; Zhang Rongjun; Zhang Hao; Cong Chunxiao; Zhu Meiping; Shi Yuejie; Wu Yu; Wang Songyou; Zheng Yuxiang; Chen Liangyao;

  • 作者单位

    Fudan Univ Shanghai Engn Res Ctr Ultraprecis Opt Mfg Dept Opt Sci & Engn Key Lab Micro & Nano Photon Struct Minist Educ Shanghai 200433 Peoples R China;

    Fudan Univ Shanghai Engn Res Ctr Ultraprecis Opt Mfg Dept Opt Sci & Engn Key Lab Micro & Nano Photon Struct Minist Educ Shanghai 200433 Peoples R China;

    Fudan Univ Shanghai Engn Res Ctr Ultraprecis Opt Mfg Dept Opt Sci & Engn Key Lab Micro & Nano Photon Struct Minist Educ Shanghai 200433 Peoples R China;

    Fudan Univ Shanghai Engn Res Ctr Ultraprecis Opt Mfg Dept Opt Sci & Engn Key Lab Micro & Nano Photon Struct Minist Educ Shanghai 200433 Peoples R China;

    Fudan Univ Shanghai Engn Res Ctr Ultraprecis Opt Mfg Dept Opt Sci & Engn Key Lab Micro & Nano Photon Struct Minist Educ Shanghai 200433 Peoples R China;

    Chinese Acad Sci Shanghai Inst Opt & Fine Mech Lab Thin Film Opt Shanghai 201800 Peoples R China;

    Fudan Univ Shanghai Engn Res Ctr Ultraprecis Opt Mfg Dept Opt Sci & Engn Key Lab Micro & Nano Photon Struct Minist Educ Shanghai 200433 Peoples R China;

    Fudan Univ Shanghai Engn Res Ctr Ultraprecis Opt Mfg Dept Opt Sci & Engn Key Lab Micro & Nano Photon Struct Minist Educ Shanghai 200433 Peoples R China;

    Fudan Univ Shanghai Engn Res Ctr Ultraprecis Opt Mfg Dept Opt Sci & Engn Key Lab Micro & Nano Photon Struct Minist Educ Shanghai 200433 Peoples R China;

    Fudan Univ Shanghai Engn Res Ctr Ultraprecis Opt Mfg Dept Opt Sci & Engn Key Lab Micro & Nano Photon Struct Minist Educ Shanghai 200433 Peoples R China;

    Fudan Univ Shanghai Engn Res Ctr Ultraprecis Opt Mfg Dept Opt Sci & Engn Key Lab Micro & Nano Photon Struct Minist Educ Shanghai 200433 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Quantum confinement effects; MoS2; Excitonic binding energy; Critical points; Spectroscopic ellipsometry;

    机译：量子限制效应;MOS2;激发器结合能量;关键点;光谱椭圆形测定法;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号