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首页> 外文期刊>Applied Surface Science >2D HfN_2/graphene interface based Schottky device: Unmatched controllability in electrical contacts and carrier concentration via electrostatic gating and out-of-plane strain
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2D HfN_2/graphene interface based Schottky device: Unmatched controllability in electrical contacts and carrier concentration via electrostatic gating and out-of-plane strain

机译：基于2D HFN_2 / Graphene接口的肖特基装置：通过静电门和外平面菌株的电触点和载流子浓度的无与伦比的可控性

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摘要

Graphene-based van der Waals heterostructure (vdWH) comprising of HfN2 monolayer stacked over graphene has been designed and studied based on density functional theory. The vdWH forms a n-type Schottky contact with a Schottky barrier height (SBH) of 0.67 eV, while it exhibits p-type SBH of 0.93 eV. The response of SBH and electrical contact properties to external perturbation, such as, vertical strain and electric field has been investigated thoroughly. Under the application of strain and normal electric field within range of +/- 0.3 V/angstrom, the type of electrical contacts, i.e., n/p type Schottky or Ohmic, is found to be interconvertible, while electron/hole doping in graphene is tunable by a doping carrier concentration of up to similar to 10(13) cm(-2), which lies between experimentally observed molecular doping (similar to 10(12) cm(-2)) and electrolytic gating (similar to 10(14) cm(-2)). Such an extremely high tunability in electrical contacts, doping carrier concentration along with its excellent optical response in the visible light region shows unrivalled potential of this vdWH in high performance graphene-based futuristic Schottky transistors with high on/off ratio, ultrathin phototransistor with high gain, low-power multivalued optical non volatile memory devices, and nanoelectronics.
机译：基于密度泛函理论，设计和研究了包含在石墨烯上堆叠的HFN2单层的基于石墨烯的VAN DAR WAALS异质结构（VDWH）。 VDWH形成与肖特基势垒高度（SBH）为0.67eV的N型肖特基接触，同时表现出0.93eV的P型SBH。彻底研究了SBH和电接触性与外部扰动的响应，例如垂直应变和电场。在+/- 0.3V /埃范围内的应变和正常电场的应用，发现电触点的类型，即N / P型肖特基或欧姆，在石墨烯中掺杂的电子/孔掺杂是互连的通过掺杂载体浓度可调谐至于类似于10（13 )cm（-2）的掺杂载体浓度，其位于实验观察到的分子掺杂（类似于10（12 )cm（-2））和电解浇口（类似于10（14 ）cm（-2））。在电触点中的这种极高的可调谐性，掺杂载流子浓度以及可见光区域中的优异光学响应，显示了高性能石墨烯的未来派肖特基晶体管具有高开/关率，超高增益的高性能光电晶体管的无与伦比的电位，低功率多值光学非易失性存储器件和纳米电子学。

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