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Area-selective Electron-beam induced deposition of Amorphous-BN_x on graphene

机译:区域选择性电子束诱导石墨烯的无定形BN_X沉积

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Thin, stable and inert dielectric spacers are essential for manufacturing electronic devices based on 2D materials. However, direct synthesis on top of 2D materials is difficult due to their inert nature. In this work, we studied how an electron beam induces fragmentation of borazine and enables spatially confined synthesis of amorphousBNx on graphene at room temperature. Using a combination of X-ray Photoelectron Spectroscopy, Low Energy Electron Microscopy, and Scanning Tunneling Microscopy we studied the morphology of the heterostructure, its chemical composition, and finally its temperature evolution. We find that electron-beam induced deposition starts by the binding of heavily fragmentized borazine, including atomic boron, followed by the growth of a multilayer with a 1:0.7 B:N ratio. The final structure exhibits a thermal stability up to 1400 K and similar to 50 nm spatial control provided by the electron beam. Our studies provide surface science insight into the use of electron beams for synthesis and lateral control of stable and inert layers in 2D heterostructures.
机译:薄,稳定和惰性介电垫片对于基于2D材料的制造电子器件至关重要。然而,由于其惰性性质,2D材料顶部的直接合成难以。在这项工作中,我们研究了电子束如何诱导硼杉的破碎化,并且在室温下使空间局限于石墨烯上的空间合成。使用X射线光电子能谱,低能量电子显微镜和扫描隧穿显微镜的组合,我们研究了异质结构,化学成分,最终其温度进化的形态。我们发现电子束诱导的沉积通过重碎片化的硼杉的结合开始,包括原子硼,其次是多层的生长,具有1:0.7b:n比。最终结构表现出高达1400 k的热稳定性,并且通过电子束提供的50nm空间控制。我们的研究提供了对2D异质结构中的稳定和惰性层的合成和横向控制使用电子束的表面科学洞察。

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