The Effect of Helium Dilution on Optical and Photoelectric Properties of a-Si: H Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Technique

R. I. Badran

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The Effect of Helium Dilution on Optical and Photoelectric Properties of a-Si: H Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Technique

机译：氦稀释对等离子体增强化学气相沉积技术制备的a-Si：H薄膜的光电性能的影响

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The effect of Helium (He) dilution on optical and photoelectric properties of hydrogenated amorphous silicon (a-Si:H) thin film samples prepared at substrate temperature of 75℃ with increased growth rate by plasma-enhanced chemical vapor deposition (PECVD) technique is studied using spectrophotomet-ric (SP) and steady-state photocarrier grating techniques (SSPG). The values of refractive index, absorption coefficient, thickness and optical energy gap, which are found from the analysis of transmission spectra using Swanepoel method, are compared with those obtained by employing variable-angle spectroscopic ellipsometry technique. The samples exhibit a tendency towards an increase in energy gap and a decrease in refractive index with the increase in He dilution. The obtained optical absorption coefficients of a-Si:H samples are compared with those of hydrogenated microcrystalline silicon (μ,c-Si:H) and crystalline silicon (c-Si) samples. It is also found that the change in He dilution has an influence on the ambipolar diffusion length, minority and majority mobility-lifetime products.

机译：氦（He）稀释对通过等离子增强化学气相沉积（PECVD）技术在衬底温度为75℃且生长速率增加的情况下制备的氢化非晶硅（a-Si：H）薄膜样品的光学和光电特性的影响是使用分光光度（SP）和稳态光电载波光栅技术（SSPG）进行了研究。将通过使用Swanepoel方法分析透射光谱得到的折射率，吸收系数，厚度和光能隙值与采用可变角度光谱椭偏技术获得的值进行比较。样品显示出随着He稀释度的增加，能隙增加和折射率降低的趋势。将获得的a-Si：H样品的光吸收系数与氢化微晶硅（μ，c-Si：H）和晶体硅（c-Si）样品的吸光系数进行比较。还发现氦气稀释度的变化对双极性扩散长度，少数和多数迁移率-寿命产物有影响。

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来源
《Arabian Journal for Science and Engineering》 |2012年第1期|p.183-195|共13页
作者
R. I. Badran;
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作者单位

Physics Department, The Hashemite University, P. O. Box 150459, Zarqa, Jordan,School of Natural Resources Engineering and Management, German Jordanian University,P. O. Box 35247, Amman 11180, Jordan;

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收录信息美国《科学引文索引》(SCI);
原文格式 PDF
正文语种 eng
中图分类
关键词
optical properties; photometry; spectroscopic ellipsometry; tauc-lorentz model; PECVD; microcrystalline and amorphous silicon; electronic properties; ambipolar diffusion length;

机译：光学性质光度法椭圆偏振光谱法tauc-lorentz模型PECVD;微晶和非晶硅;电子性能;双极扩散长度;

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1. Influence of hydrogen dilution on structural, electrical and optical properties of hydrogenated nanocrystalline silicon (nc-Si : H) thin films prepared by plasma enhanced chemical vapour deposition (PE-CVD) [J] . Funde AM, Bakr NA, Kamble DK, Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion . 2008,第10期

机译：氢稀释对通过等离子体增强化学气相沉积（PE-CVD）制备的氢化纳米晶硅（nc-Si：H）薄膜的结构，电学和光学性质的影响
2. The use of optical microscopy to examine crystallite nucleation and growth in thermally annealed plasma enhanced chemical vapor deposition and hot wire chemical vapor deposition a-Si:H films [J] . Mahan A. H. Journal of Applied Physics . 2012,第10期

机译：使用光学显微镜检查热退火等离子体增强化学气相沉积和热线化学气相沉积a-Si：H膜中的晶体成核和生长
3. The use of optical microscopy to examine crystallite nucleation and growth in thermally annealed plasma enhanced chemical vapor deposition and hot wire chemical vapor deposition a-Si:H films [J] . A. H. Mahan, M. S. Dabney, R. C. Reedy Jr, Journal of Applied Physics . 2012,第10期

机译：使用光学显微镜检查热退火等离子体增强化学气相沉积和热线化学气相沉积a-Si：H膜中的晶体成核和生长
4. Nanostructural and Optical Features of nc-Si:H Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Techniques [C] . J.-H. Shim, N.-H. Cho, Y.-J. Kim, International Symposium on Eco-Materials Processing Design . 2006

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8. Substrate effects on the structure and optical properties of epitaxial PbTiO(sub 3) thin films prepared by metal-organic chemical vapor deposition [R] . Foster, C. M., Li, Z., Bai, G. R., 1994

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The Effect of Helium Dilution on Optical and Photoelectric Properties of a-Si: H Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Technique

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