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首页> 外文期刊>東北大学電通谈话会記録 >Nonradiative Detection of Deep Levels in Compound Semiconductors
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Nonradiative Detection of Deep Levels in Compound Semiconductors

机译：复合半导体中深能级的非辐射检测

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摘要

Piezoelectric photoacoustic spectroscopy (PPAS) measurements were carried out on liquid encapsulated Czochralski (LEC) grown semi-insulating (SI) GaAs to investigate the lattice relaxation of deep donor EL2 and EL6. By detecting the emitted phonons, direct experimental evidence was obtained for the first time concerning the presence of lattice relaxation during the optical electron transitions in EL2 a11d EL6. With its ability to detect EL2 and EL6 in wafer--size thickness (0.5 mn1) samples, PPAS is a useful, highly sensitive characterizing method for deep levels in Si- GaAs crystals. Based on the analyses of PPAS signals, it is argued that EL2 and EL6 microstructures most probably include V#, and As..' respectively.
机译：在液体封装的切克劳斯基（LEC）生长的半绝缘（SI）GaAs上进行了压电光声光谱（PPAS）测量，以研究深施主EL2和EL6的晶格弛豫。通过检测发射的声子，首次获得了直接实验证据，涉及在EL2a11d EL6中光学电子跃迁期间晶格弛豫的存在。 PPAS具有检测晶圆尺寸厚度（0.5 mn1）样品中EL2和EL6的能力，是一种用于Si-GaAs晶体深能级的有用，高度灵敏的表征方法。根据对PPAS信号的分析，认为EL2和EL6的微结构最有可能分别包含V＃和As ..'。

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