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Influence of Metallic Indium Concentration on the Properties of Indium Oxide Thin Films

机译：金属铟浓度对氧化铟薄膜性能的影响

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Current-voltage characteristics of indium-embedded indium oxide thin films (600-850 A), with Ag electrodes approximately 1000 A thick, prepared by reactive evaporation of pure metallic indium in partial air pressure have been studied for substrate temperatures between 50 and 125℃. The optical properties of these Films have also been investigated as a function of metallic indium concentration and substrate temperature. I-V characteristics of all the samples are non-ohmic, independent of metallic indium concentration. The conductivity of the films increases but the optical transmission decreases with increasing metallic indium concentration. Metallic indium concentration was found to be an important parameter affecting the film properties. Furthermore, two possible conduction mechanisms are proposed.
机译：研究了在部分空气压力下通过纯金属铟在部分空气压力下的反应性蒸发制备的，Ag电极厚约1000 A的铟埋氧化铟薄膜（600-850 A）的电流-电压特性。还研究了这些膜的光学性质与金属铟浓度和基材温度的关系。所有样品的I-V特性均为非欧姆性，与金属铟浓度无关。膜的电导率增加，但是随着金属铟浓度的增加，光透射率降低。发现金属铟浓度是影响膜性能的重要参数。此外，提出了两种可能的传导机制。

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