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Removal Rate of Phosphorus from Molten Silicon

机译:熔融硅中磷的去除率

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摘要

An electron beam melting technique under high vacuum is known to be effective for the removal of phosphorus from silicon, however, the rate of removal is not yet adequate. In order to improve the removal rate, the effects of four experimental factors on this rate were investigated. Raising temperature of the surface of molten silicon provide effective, neither residual gas pressure in a vacuum chamber nor stirring molten silicon improve the rate, while supplying reactant gas to molten silicon had some effect.
机译:已知在高真空下的电子束熔化技术对于从硅中去除磷是有效的,但是,去除速率还不够。为了提高去除率,研究了四个实验因素对该去除率的影响。升高熔融硅表面的温度提供了有效的作用,真空室中的残余气体压力和搅拌熔融硅都不会提高速率,而向熔融硅中供应反应气体则有一定效果。

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