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Oxidation Mechanism of Cu_2O and Defect Structure of CuO at High Temperatures

机译:Cu_2O在高温下的氧化机理及缺陷结构

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摘要

Kinetics and mechanism of Cu_2O oxidation have been studied as a function of temperature (973-1273 K) and oxygen pressure (1-10~5 Pa), using microther-mogravimetric and marker techniques. It has been found that in early stages not exceeding 30 hours, CuO formation follows approximately cubic rate law and in later stages, the process can be described by parabolic kinetics with the rate being independent of Cu_2O pretreatment. Marker experiments, confirmed by two-stage oxidation studies, have demonstrated that the growth process of CuO layer on the surface of Cu_2O proceeds by the outward diffusion of cations, clearly indicating that the cation sublattice of CuO is predominantly defected. These results together with kinetic and nonstoichiometry data strongly suggest that in addition to intrinsic electronic disorder (i.e. electron holes and quasi-free electrons), doubly ionized cation vacancies are the prevailing ionic defects in this oxide.
机译:利用微量热重和标记技术研究了Cu_2O氧化的动力学和机理与温度(973-1273 K)和氧气压力(1-10〜5 Pa)的关系。已经发现,在不超过30小时的早期阶段,CuO的形成遵循立方速率定律,而在后期阶段,该过程可以用抛物线动力学来描述,其速率与Cu_2O预处理无关。通过两阶段氧化研究证实的标记实验表明,Cu_2O表面上的CuO层的生长过程是通过阳离子的向外扩散而进行的,从而清楚地表明CuO的阳离子亚晶格主要存在缺陷。这些结果与动力学和非化学计量学数据一起强烈表明,除了固有的电子紊乱(即电子空穴和准自由电子)外,双电离阳离子空位是该氧化物中普遍存在的离子缺陷。

著录项

  • 来源
    《High temperature materials and processes》 |2011年第5期|p.277-287|共11页
  • 作者单位

    Department of Solid State Chemistry, Faculty of Materials Science and Ceramics, AGH University of Science and Technology, al. A. Mickiewicza 30, 30-059 Krakow, Poland;

    Department of Solid State Chemistry, AGH University of Science and Technology, Krakow, Poland;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    CuO; mechanism of the reaction; kinetics; defect structure;

    机译:氧化铜反应机理动力学;缺陷结构;

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