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首页> 外文期刊>Electrical and Computer Engineering, Canadian Journal of >Designing Linear PAs at Millimeter-Wave Frequencies Using Volterra Series Analysis
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Designing Linear PAs at Millimeter-Wave Frequencies Using Volterra Series Analysis

机译：使用Volterra级数分析设计毫米波频率下的线性功率放大器

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摘要

Power amplifiers (PAs) at millimeter-wave (mm-wave) frequencies are required for delivering high output linear power while being efficient; however, their performance is severely affected by the scaled semiconductor technology and the operating frequency. To improve the linearity of mm-wave PAs, it is recommended that an external linearization technique such as predistortion be used. The PA presented in this paper uses adaptive predistortion (APD). The APD linearization technique was developed using the Volterra series analysis on the silicon–germanium (SiGe) heterojunction bipolar transistor. The Volterra series analysis was used to identify and characterize the third-order intermodulation distortion components. The PA uses a single-ended common-emitter topology. It consists of three stages biased in the Class AB mode. The PA and APD were designed using the 130-nm SiGe bipolar and complementary metal–oxide–semiconductor process. The PA and APD achieve an optimum third-order intermodulation reduction of 10 dB and an improved linear output power of 2.5 dBm.
机译：需要使用毫米波（mm-wave）频率的功率放大器（PA）来提供高输出线性功率，同时又要高效；但是，它们的性能会受到规模化的半导体技术和工作频率的严重影响。为了提高毫米波功率放大器的线性度，建议使用外部线性化技术，例如预失真。本文介绍的PA使用自适应预失真（APD）。 APD线性化技术是通过对硅锗（SiGe）异质结双极晶体管的Volterra级数分析开发的。 Volterra级数分析用于识别和表征三阶互调失真分量。该PA使用单端共发射极拓扑。它由偏置在AB类模式下的三个阶段组成。 PA和APD是使用130 nm SiGe双极和互补金属氧化物半导体工艺设计的。 PA和APD可实现10 dB的最佳三阶互调降低和2.5 dBm的改进线性输出功率。

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