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Formation of High-quality Advanced High-k Oxide Layers at Low Temperature by Excimer UV Lamp-assisted Photo-CVD and Sol-gel Processing

机译:准分子紫外灯辅助光化学气相沉积和溶胶-凝胶工艺在低温下形成高质量的高级高k氧化物层

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摘要

We have successfully demonstrated that high quality and high dielectric constant layers can be fabricated by low temperature photo-induced or-assisted processing.Ta_2O_5 and ZrO_2 have been deposited at t<400 'C by means of a UV photo-CVD technique and HfO_2 by photo-assisted sol-gel processing with the aid of excimer lamps.The UV annealing of as-grown layers was found to significantly improve their electrical properties.Low leakage current densities on the order of 10~(-8)A/cm~2 at 1 MV/cm for deposited ultrathin Ta_2O_5 films and ca.10~(-6)A/cm~2 for the photo-CVD ZrOz layers and photo-irradiated sol-gel HfO_2 layers have been readily achieved.The improvement in the leakage properties of these layers is attributed to the UV-generated active oxygen species O(~1D)which strongly oxidize any suboxides to form more stoichiometric oxides on removing certain defects,oxygen vacancies and impurities present in the as-prepared layers.The photo-CVD Ta_2O_5 films deposited across 10.16-cm Si wafers exhibit a high thickness uniformity with a variation of less than(+-)2.0% being obtained for ultrathin ca.10 nm thick films.The lamp technology can in principle be extended to larger area wafers,providing a promising low temperature route to the fabrication of a range of high quality thin films for future ULSI technology.
机译:我们已经成功地证明了可以通过低温光诱导或辅助工艺来制造高质量和高介电常数的层。通过紫外光化学CVD技术,在t <400'C时沉积了Ta_2O_5和ZrO_2,而HfO_2通过借助准分子灯进行光辅助溶胶-凝胶加工。生长层的紫外线退火可显着改善其电性能。低漏电流密度约为10〜(-8)A / cm〜2沉积的Ta_2O_5薄膜厚度为1 MV / cm时,光CVD ZrOz层和光辐照的溶胶-凝胶HfO_2层约为10〜(-6)A / cm〜2。这些层的特性归因于紫外线产生的活性氧O(〜1D),它会强烈氧化任何低价氧化物,从而在去除某些缺陷,氧空位和制备层中存在的杂质时形成更多化学计量的氧化物。 Ta_2O_5薄膜沉积在10.16-cm Si晶圆上er表现出高的厚度均匀性,对于超薄的约10 nm厚的薄膜,其变化小于(+-)2.0%。原则上,该灯技术可以扩展到更大面积的晶片,从而提供了一种有希望的低温制造方法。为未来的ULSI技术制造一系列高质量的薄膜。

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