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Near infrared polymer light-emitting diodes

机译:近红外聚合物发光二极管

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摘要

High efficiency of near infrared polymer light-emitting diodes with bilayer structure was obtained. The diode structure is ITO/PEDOT/Ll/L2/Ba/Al, where L1 is phenyl-substituted poly [p-phenylphenylene vinylene] derivative (P-PPV), L2 is 9,9-dioctylfluorene(DOF) and 4,7-bis(3-hexylthiophen)-2-yI-2,l,3-naphthothiadiazole(HBNT) copolymer (PFHDNT10). The electroluminescence (EL) spectrum of diodes from PFHDNT10 is at 750 nm located in the range of near infrared. The maximum external quantum efficiency is up to 2.1 percent at the current density of 35 mA/cm~2. The improvement of the diode's performances was considered to be the irradiative excitons confined in the interface between L1 and L2 layers.
机译:获得了具有双层结构的高效率的近红外聚合物发光二极管。二极管结构为ITO / PEDOT / L1 / L2 / Ba / Al,其中L1为苯基取代的聚对[对亚苯基亚乙烯基]衍生物(P-PPV),L2为9,9-二辛基芴(DOF)和4,7 -双(3-己基噻吩)-2-yI-2,1,3-萘噻二唑(HBNT)共聚物(PFHDNT10)。 PFHDNT10的二极管的电致发光(EL)光谱位于750 nm,位于近红外范围内。在35 mA / cm〜2的电流密度下,最大外部量子效率高达2.1%。二极管性能的提高被认为是限制在L1和L2层之间界面的辐照激子。

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