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首页> 外文期刊>Chinese science bulletin >Highly C-axis oriented LiNbO_3 thin film on amorphous SiO_2 buffer layer and its growth mechanism
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Highly C-axis oriented LiNbO_3 thin film on amorphous SiO_2 buffer layer and its growth mechanism

机译：非晶SiO_2缓冲层上高C轴取向LiNbO_3薄膜及其生长机理

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摘要

LiNbO_3 waveguiding films with highly C-axis orientation and superior crystallographic quality have been deposited on the amorphous SiO_2 buffer layer of Si wafer by pulsed laser deposition (PLD) technique. X-ray diffraction, high-resolution electron transmission microscopy and atomic force microscopy were applied to characterizing the quality and orientation of LiNbO, thin film, and the optimized deposition conditions have been determined for C-axis oriented growth. LiNbO_3 thin films on amorphous SiO_2 buffer layer were composed of intimate arrangements of quadrangular single crystal domain (150 nm x 150 nm) with C-axis orientation, and displayed sharp interface structures. The measurements of prism coupling technique indicate that the laser can be coupled into the LiNbO_3 film and TE and TM waveguiding modes were detected. In addition, the possible mechanism of oriented growth on amorphous buffer layer and "film-substrate effects" were discussed briefly, which suggests that its growth mechanism is likely analogous to the Volmer model with characteristics of three-dimensional islands nucleation on the smooth crystal surface.
机译：通过脉冲激光沉积（PLD）技术，在硅片的非晶SiO_2缓冲层上沉积了具有高C轴取向和优良结晶学性能的LiNbO_3波导膜。利用X射线衍射，高分辨率电子透射显微镜和原子力显微镜对LiNbO，薄膜的质量和取向进行了表征，并确定了C轴取向生长的最佳沉积条件。非晶SiO_2缓冲层上的LiNbO_3薄膜由具有C轴方向的四边形单晶域（150 nm x 150 nm）紧密排列构成，并显示出清晰的界面结构。棱镜耦合技术的测量表明，激光可以耦合到LiNbO_3薄膜中，并检测到TE和TM波导模式。此外，简要讨论了在非晶缓冲层上定向生长的可能机理和“膜-衬底效应”，这表明其生长机理可能类似于具有光滑晶体表面三维岛形核特征的Volmer模型。 。

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