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Synthesis and properties of ferroelectrics/high temperature superconductor integrated films

机译：铁电体/高温超导体集成膜的合成与性能

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The carrier densities of high temperature superconductors (HTSC) can be easily modulated by externally applied electric field because of their lower density value than that of conventional superconductors (e.g. for YBa_2Cu_3O_7 (YBCO), n=5 X 10~(21)/cm~3). Researches on the superconducting field-effect transistors (SuFET) based on SrTiO_3 as the gate electrode have been carried out, but with a relatively low gain, 0.9. In order to improve the SuFET, we think using ferroelectrics instead of SrTiO_3 asthe gate electrode could be a better choice, the reasons are: (i) the good lattice matching and epitaxial relationship between the films of HTSC and ferroelectrics, such as YBCO to BaTiO_3 and Pb(Zr_(1-x)Ti_x)O_3(PZT), due to their same perovskite crystal structure; (ii) the higher gain of the devices because of the higher dielectric constant of the ferroelectrics; (iii) the non-volatile effect of devices due to the residual polarization after the electric field being removed. On the other hand, some physical properties, such as the critical temperature, transport properties, and flux pinning of HTSC could be affected by the polarization field of the ferroelectric gate electrode. At the same time, the sensitivity and the switch velocity of ferroelectric device, such as the optical switch device and memory device can be developed due to the change of polarization condition of ferroelectrics through controlling the varying transport behavior of superconductor in superconducting state and normal state.To date, the heterostructures of HTSC/ferroelectrics was studied to improve the fatigue property of ferroelectric random-access-memory (FRAM), using HTSC film as the electrode due to its good metallicity at room temperature and its good epitaxial growthrelationship with ferroelectric film, but there are very few reports on the superconducting property under the electric field. Our purpose is to study the interaction of ferroelectrics and high temperature superconductor. So it is important to synthesizeand characterize the integrated film of HTSC and ferroelectrics at the early stage of growth. This note presents the research of synthesis of high temperature superconducting/ferroelectric heterostructure and the microstructure, superconducting and dielectric properties of the integrated film.
机译：高温超导体（HTSC）的载流子密度比常规超导体的密度低（例如，对于YBa_2Cu_3O_7（YBCO），n = 5 X 10〜（21）/ cm〜），因此可以通过外部电场容易地对其进行调制。 3）。已经对基于SrTiO_3作为栅电极的超导场效应晶体管（SuFET）进行了研究，但是增益相对较低，为0.9。为了改善SuFET，我们认为使用铁电体代替SrTiO_3作为栅电极可能是一个更好的选择，原因如下：（i）HTSC和铁电体膜之间的良好晶格匹配和外延关系，例如YBCO与BaTiO_3和Pb（Zr_（1-x）Ti_x）O_3（PZT），由于它们具有相同的钙钛矿晶体结构； （ii）由于铁电体的介电常数较高，所以器件的增益较高； （iii）去除电场后残留极化导致的器件的非易失性效应。另一方面，铁电栅电极的极化场可能会影响HTSC的临界温度，传输性能和通量钉扎等某些物理性能。同时，通过控制超导体在​​超导状态和正常状态下的变化的输运行为，可以通过改变铁电体的极化条件来开发诸如光开关器件和存储器件之类的铁电器件的灵敏度和开关速度。迄今为止，由于HTSC薄膜在室温下具有良好的金属性以及与铁电薄膜的良好外延生长关系，因此研究了HTSC /铁电薄膜的异质结构以改善铁电随机存取存储器（FRAM）的疲劳性能。但是关于电场下的超导性质的报道很少。我们的目的是研究铁电体与高温超导体的相互作用。因此，重要的是在生长的早期合成和表征HTSC和铁电体的集成膜。本文介绍了高温超导/铁电异质结构的合成以及集成膜的微结构，超导和介电性能的研究。

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