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Dependence of film resistance on fractal formation of Au/a-Ge bilayer films

机译:薄膜电阻对Au / a-Ge双层薄膜分形形成的依赖性

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摘要

In recent years there has been great progress in the study of the fractal crystallization in the metal/semiconductor bilayer film system. The nature of the fractal crystallization in these bilayer films is being revealed. However, many of the studiesfocused on the growth mechanism of the fractal, while little attention has been given to the change in physical properties of the films during the fractal structure formation. After fractal crystallization of a metal/semiconductor film there should existevident change in its microstructure, which may lead to relative change in its macroscopic physical properties. What property of the film system does the fractal dimension scale? This problem is worth concerning and studying. In this work the fractal crystallization behavior of Au/a-Ge bilayer film was investigated, and the film resistance with different fractal dimensions was measured for the first time. We found that there exist evident relationships between the film resistance and the fractal crystallization behavior (or the fractal dimension). The experimental results can be reasonably explained.
机译:近年来,在金属/半导体双层膜系统中的分形结晶的研究中取得了很大的进展。这些双层膜中的分形结晶的性质正在被揭示。然而,许多研究集中于分形的生长机理,而很少关注分形结构形成过程中膜的物理性质的变化。在金属/半导体膜的分形结晶之后,应该存在其微观结构的明显变化,这可能导致其宏观物理性能的相对变化。分形维数对胶片系统的性质有什么影响?这个问题值得关注和研究。在这项工作中,研究了Au / a-Ge双层膜的分形结晶行为,并首次测量了具有不同分形尺寸的膜电阻。我们发现在膜电阻和分形结晶行为(或分形维数)之间存在明显的关系。实验结果可以合理解释。

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