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Fractal characteristics of surface morphology for hydrogenated silicon films

机译：氢化硅膜表面形貌的分形特征

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Hydrogenated nanocrystalline silicon films (nc-Si:H) are a developing novel man-made functional semiconductor material in recent years. Their strange microstructure and physical properties of nc-Si:H films are attracting our attention. We have used the conventional structure analysis procedures, such as X-ray diffraction pattern, Raman scattering spectrum, high resolution transmission electron microscopy (HREM), and the scanning tunnelling microscope (STM), to analyze their microstructure. Since Mandelbrot proposed the fractal theory in 1982, it has become a quantitatively characterizing means to distinguish the microstructure morphology of materials. Recently, the fractal formation in a-Ge/metal and a-Si/metal bilayer films was studied by Wu and Bo Bian et al. They found that the dendrite patterns of Si and Ge are indeed fractals and suggested a randomly successive nucleation mechanism to explain the fractal formation.
机译：近年来，氢化纳米晶硅膜（nc-Si：H）是一种正在发展的新型人造功能半导体材料。 nc-Si：H薄膜奇特的微观结构和物理性能吸引了我们的注意力。我们已经使用了常规的结构分析程序，例如X射线衍射图，拉曼散射光谱，高分辨率透射电子显微镜（HREM）和扫描隧道显微镜（STM）来分析其微观结构。自从Mandelbrot于1982年提出分形理论以来，它已成为区分材料微观结构形态的定量表征手段。最近，Wu和Bo Bian等人研究了在a-Ge /金属和a-Si /金属双层薄膜中的分形形成。他们发现Si和Ge的枝晶图案确实是分形的，并提出了随机连续的成核机制来解释分形的形成。

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