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Preparation of carbon nitride films and photovoltaic property of C-N/CuInSe_2 heterojunction

机译：氮化碳膜的制备及C-N / CuInSe_2异质结的光电性能

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摘要

The new carbon nitride films promise to be with super high hardness, unique physical and chemical properties, and have important applications in many fields, such as magnetics, electronics and mechanics, because they are suggested to have a larger bulk modulus B than diamond, which arouses scientists all over the world to great interest. However, many experimental efforts to yield this predicted material had failed since Liu reported the stable phase of β-C_3N_4 and the possibility of synthesis in 1989. Recently, Niu et al. prepared the films containing nano-size β-C_3N_4 phase grains by laser ablation of graphite target combined with a high-flux atomic nitrogen source. In Niu's method thermodynamic and kinetic limitations were avoided. Obviously,this impractical process can only be taken as a fundamental method for synthesizing a hypothetic new material. We began a related research item in 1988, and synthesized the carbon nitride films late that year by RF sputtering of graphite in nitrogen-argon plasma. We also prepared C-N/CuInSe_2 heterojunction and obtained the preliminary photovoltaic property successfully.
机译：新的氮化碳膜有望具有超高的硬度，独特的物理和化学特性，并在许多领域具有重要的应用，例如磁性，电子学和机械学，因为它们被建议具有比金刚石更大的体积模量B，因此引起了全世界科学家的极大兴趣。然而，自1989年Liu报道了β-C_3N_4的稳定相和合成的可能性以来，为获得这种预测的材料而进行的许多实验工作都失败了。通过激光烧蚀石墨靶结合高通量原子氮源，制备了含有纳米级β-C_3N_4相晶粒的薄膜。在牛的方法中，避免了热力学和动力学的局限性。显然，这种不切实际的过程只能作为合成假设的新材料的基本方法。我们从1988年开始一项相关的研究项目，并于当年下半年通过在氮-氩等离子体中进行RF溅射石墨合成了氮化碳膜。我们还制备了C-N / CuInSe_2异质结，并成功获得了初步的光伏性能。

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