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Synchrotron radiation photoemission study on growth of gadolinium film ovee Ni(110)surface

机译:同步辐射光发射研究of膜Ni(110)表面的生长

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摘要

The growth of Gd film on Ni(110)surface was studied by synchrotron radiation photoemis- sion spectroscopy and XPS techniques. It is revealed that in coverage range of 0-0.22 nm Gd4f core level showed a single-peak structure, therefore Gd film grows over Ni(110)in the layer-by-layer mode. However, when Gd coverage was larger than 0.22 nm the Gd4f peak turned gradually into dou- ble-peak and a double-peak structure with 2.3 eV separation was formed at 1.51 nm, meanwhile simi- lar phenomenon was observed in the Gd4d XPS spectra.
机译:利用同步加速器辐射光发射光谱法和XPS技术研究了Ni(110)表面Gd膜的生长。结果表明,在0-0.22 nm的覆盖范围内,Gd4f的核能级呈现单峰结构,因此Gd膜以逐层模式生长在Ni(110)上。但是,当Gd覆盖范围大于0.22 nm时,Gd4f峰逐渐变为双峰,并且在1.51 nm处形成具有2.3 eV间隔的双峰结构,同时在Gd4d XPS光谱中观察到类似现象。

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