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首页> 外文期刊>Circuits and Systems II: Express Briefs, IEEE Transactions on >Dual Band VCO Based on a High-Quality Factor Switched Interdigital Resonator for the Ku Band Using 180-nm CMOS Technology
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Dual Band VCO Based on a High-Quality Factor Switched Interdigital Resonator for the Ku Band Using 180-nm CMOS Technology

机译:基于180纳米CMOS技术的基于高质量因子切换式叉指谐振器的Ku频段双频段VCO

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A dual band and low phase noise Ku-band voltage-controlled oscillator (VCO) using 180-nm CMOS technology is presented in this brief. The proposed VCO employs a switched notch filter that can operate in the low and high band, which depends on the state of nmos transistor and has a quality factor that is higher than that of a conventional inductor–capacitor (LC) resonator. The proposed resonator doubles the quality factor compared to LC in the technology and reduces the total die area. The first band is realized by the switched interdigital resonator when a nMOS transistor is in the off state. Furthermore, the second band is realized by turning nmos transistor to the on state, which is located between two fingers in the proposed resonator. The chip is implemented in 180-nm CMOS technology, and found that the proposed VCO operates from 15.5 to 16.7 Hz (low band) and 16.6 to 17.4 GHz (high band). At 1.8-V power supply, the power consumption of the oscillator core is 5.4 and 7.2 mW in the low- and high-frequency bands, respectively. The measured phase noise is −107 dBc/Hz at 1 MHz offset from 16.7-GHz carrier frequency.
机译:本文简要介绍了使用180 nm CMOS技术的双频段和低相位噪声Ku频段压控振荡器(VCO)。拟议的VCO采用了一个开关陷波滤波器,该滤波器可以在低频带和高频带中工作,这取决于nmos晶体管的状态,并且其品质因数要高于传统的电感电容器(LC)谐振器。与该技术中的LC相比,拟议的谐振器使品质因数提高了一倍,并减小了芯片总面积。当nMOS晶体管处于截止状态时,第一频带由开关式叉指谐振器实现。此外,通过将nmos晶体管置于所建议谐振器中两个指之间的导通状态,可以实现第二个频段。该芯片采用180 nm CMOS技术实现,发现拟议的VCO在15.5至16.7 Hz(低频段)和16.6至17.4 GHz(高频段)下工作。在1.8V电源下,在低频和高频频段,振荡器内核的功耗分别为5.4 mW和7.2 mW。从16.7 GHz载波频率偏移1 MHz时,测得的相位噪声为−107 dBc / Hz。

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