An Ultra Low-Power Dual-Band IR-UWB Transmitter in 130-nm CMOS

Batur O. Z.; Akdag E.; Akkurt H. K.; Oncu A.; Koca M.; Dundar G.

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An Ultra Low-Power Dual-Band IR-UWB Transmitter in 130-nm CMOS

机译：采用130nm CMOS的超低功耗双频IR-UWB发送器

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In this brief, a 0–960-MHz/3.1–5-GHz dual-band ultra low-power impulse-radio ultrawideband transmitter is presented. The pulse transmitter integrated circuit is fabricated using a 130-nm CMOS process with the core die area of 0.1 $hbox{mm}^{2}$. At 1-MHz pulse repetition frequency, the power consumption values are measured in the lower and the upper bands as 5.6 and 31 $muhbox{W}$, respectively. The lower and the upper band “off-time” power consumptions of the transmitter are 0.36 and 1.7 $ muhbox{W}$, respectively. The dc-to-radio-frequency conversion efficiencies are 11.1% in the lower band and 4.8% in the upper band.

机译：在本简介中，介绍了一种0–960MHz / 3.1–5 GHz双频带超低功率脉冲无线电超宽带发射机。脉冲发射器集成电路是使用130 nm CMOS工艺制造的，其核心芯片面积为0.1 xhbox {mm} ^ {2} $。在1 MHz脉冲重复频率下，功耗值在较低和较高的频段分别为5.6和31 $ muhbox {W} $。发射机的较低和较高频段的“关闭时间”功耗分别为0.36和1.7 $ muhbox {W} $。直流到射频的转换效率在较低频段为11.1％，在较高频段为4.8％。

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来源
《Circuits and Systems II: Express Briefs, IEEE Transactions on》 |2012年第11期|p.701-705|共5页
作者
Batur O. Z.; Akdag E.; Akkurt H. K.; Oncu A.; Koca M.; Dundar G.;
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作者单位

Department of Electrical and Electronics Engineering, Boğaziçi University , Istanbul, Turkey;

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正文语种 eng
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关键词
Band pass filters; CMOS integrated circuits; Dual band; Pulse generation; Radio transmitters; Semiconductor device measurement; CMOS; digital; dual band; impulse radio; low power; pulse generator; radio-frequency (RF) integrated circuit; transmitter; ultrawideband (UWB);

机译：带通滤波器;CMOS集成电路;双频;脉冲产生;无线电发射机;半导体器件测量;CMOS;数字;双频;脉冲广播;低电量;脉冲发生器射频（RF）集成电路;发射机;超宽带（UWB）;

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1. A 130-nm CMOS 0.007- Ring-Oscillator-Based Self-Calibrating IR-UWB Transmitter Using an Asynchronous Logic Duty-Cycled PLL [J] . Crepaldi M., Demarchi D. Circuits and Systems II: Express Briefs, IEEE Transactions on . 2013,第5期

机译：使用异步逻辑占空比PLL的基于130nm CMOS 0.007环形振荡器的自校准IR-UWB发送器
2. An ultra-low power configurable IR-UWB transmitter in 130nm CMOS [J] . Batur Okan Zafer, Dundar Gunhan, Koca Mutlu Analog Integrated Circuits and Signal Processing . 2019,第3期

机译：130nm CMOS中的超低功耗可配置IR-UWB发射器
3. A 2-Gb/s 130-nm CMOS RF-Correlation-Based IR-UWB Transceiver Front-End [J] . Zhou L., Chen Z., Wang C.-C., Microwave Theory and Techniques, IEEE Transactions on . 2011,第4期

机译：基于2 Gb / s的130 nm CMOS RF相关的IR-UWB收发器前端
4. A Low-Power Duty-Cycled Impulse-Radio Ultrawideband (IR-UWB) Transmitter with Bandwidth and Frequency Reconfigurability Scheme Designed in 180 nm CMOS Process [C] . Dipon K. Biswas, Ifana Mahbub IEEE Radio and Wireless Symposium . 2021

机译：具有180nm CMOS工艺中的带宽和频率可重新配置性方案的低功耗核心循环脉冲无线电超视网带（IR-UWB）发射器
5. Millimeter-wave concurrent dual-band BiCMOS RFIC transmitter for radar and communication systems [D] . Huynh, Cuong Phu Minh. 2012

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6. Design of a Low-Power Small-Area AEC-Q100-Compliant SENT Transmitter in Signal Conditioning IC for Automotive Pressure and Temperature Complex Sensors in 180 Nm CMOS Technology [O] . Imran Ali, Behnam Samadpoor Rikhan, Dong-Gyu Kim, 2018

机译：用于汽车压力和温度复合传感器的信号调理IC中采用180 Nm CMOS技术的低功耗小面积符合AEC-Q100标准的SENT发送器的设计
7. A 24-GHz Automotive Radar Transmitter with Digital Beam Steering in 130-nm CMOS [O] . Wernehag, Johan, Sjöland, Henrik 2006

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An Ultra Low-Power Dual-Band IR-UWB Transmitter in 130-nm CMOS

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