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首页> 外文期刊>Circuits, systems, and signal processing >A Novel Low Delay High-Voltage Level Shifter with Transient Performance Insensitive to Parasitic Capacitance and Transfer Voltage Level
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A Novel Low Delay High-Voltage Level Shifter with Transient Performance Insensitive to Parasitic Capacitance and Transfer Voltage Level

机译：具有对寄生电容和传输电压电平不敏感的瞬态性能的新型低延迟高压电平转换器

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摘要

In this paper, a new high-voltage level shifter (HVLS) structure is proposed, which has a significantly improved transient response over existing structures. To overcome signal transfer delay of the conventional HVLS caused by parasitic capacitance due to high-voltage MOSFETs, this structure employs a novel circuit module "inverse Schmitt trigger" to drive the pull-up transistors of conventional HVLS. As a result, the "Miller Plateau" caused by parasitic capacitance can be minimized. Hence, the overall transfer delay of the structure is significantly reduced. The simulation results based on SPECTRE and 0.5 m high-voltage CMOS process show that compared to other currently available structures whose transfer delays are several nanoseconds on average, the proposed structure is able to provide a nanosecond transfer delay without using large boost capacitors which are impractical to be integrated or using complex logic units which decrease reliability of circuit. Also, the typical transfer delay of the proposed structure is a constant 1.3 ns, which is irrelevant to parasitic capacitance and insensitive to transfer voltage level.
机译：本文提出了一种新的高压电平转换器（HVLS）结构，该结构与现有结构相比具有显着改善的瞬态响应。为了克服由高压MOSFET引起的寄生电容引起的常规HVLS的信号传输延迟，该结构采用了一种新型电路模块“施密特触发器”，以驱动常规HVLS的上拉晶体管。结果，由寄生电容引起的“米勒高原”可以被最小化。因此，该结构的总传送延迟被显着减小。基于SPECTER和0.5 m高压CMOS工艺的仿真结果表明，与其他现有的平均传输延迟为几纳秒的结构相比，所提出的结构能够在不使用大型升压电容器的情况下提供纳秒的传输延迟。集成或使用复杂的逻辑单元会降低电路的可靠性。而且，所提出的结构的典型传输延迟是恒定的1.3ns，这与寄生电容无关，并且对传输电压电平不敏感。

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  • 来源
    《Circuits, systems, and signal processing》 |2017年第9期|3598-3615|共18页
  • 作者

    Lai Xinquan; Zhong Longjie; Xu Donglai; Wang Hongyi; Yuan Bing; Li Qinqin; Ding Rui; Zhao Jingxiang;

  • 作者单位

    Xidian Univ, Inst Elect CAD, Xian, Peoples R China;

    Xidian Univ, Inst Elect CAD, Xian, Peoples R China;

    Univ Teesside, Sch Sci & Engn, Middlesbrough TS1 3BA, Cleveland, England|Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan, Peoples R China;

    Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Dept Microelect, Xian, Peoples R China;

    Xidian Univ, Inst Elect CAD, Xian, Peoples R China;

    Xidian Univ, Inst Elect CAD, Xian, Peoples R China;

    Xidian Univ, Inst Elect CAD, Xian, Peoples R China;

    Xidian Univ, Inst Elect CAD, Xian, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    HV-CMOS; Level shifter; Inverse Schmitt trigger; Transient response; MOSFET;

    机译：HV-CMOS;电平移位器;施密特反触发器;瞬态响应;MOSFET;

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