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Discharge Characteristics of a Triple-Well Diode-String ESD Clamp

机译：三孔二极管串ESD钳位电路的放电特性

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摘要

In this work, DC and transient characteristics of a 4 diode string utilizing triple-well technologies as a V_(DD)-V_(SS) clamp device for ESD protection are analyzed in detail based on 2-dimensional device and mixed-mode simulations. It is shown that there exists parasitic pnp bipolar transistor action in this device leading to a sudden increase in DC substrate leakage if anode bias is getting high. Through transient simulations for a 2000 V PS-mode HBM ESD discharge event, it is shown that the dominant discharge path is the one formed by a parasitic pnpn thyristor and a parasitic npn bipolar transistor in series. Percentage ratios of the various current components regarding the anode current at its current peaking are provided. The mechanisms involved in ESD discharge inside the diode-string clamp utilizing triple-well technologies are explained in detail, which has never been done anywhere in the literature based on simulations or measurements.
机译：在这项工作中，基于二维器件和混合模式仿真，详细分析了采用三阱技术作为用于ESD保护的V_（DD）-V_（SS）钳位器件的4二极管串的直流和瞬态特性。结果表明，如果阳极偏压变高，则该器件中存在寄生pnp双极晶体管的作用，导致DC衬底泄漏的突然增加。通过对2000 V PS模式HBM ESD放电事件的瞬态仿真，可以看出主要放电路径是由寄生pnpn晶闸管和寄生npn双极晶体管串联形成的。提供了关于电流峰值处的阳极电流的各种电流分量的百分比比。详细说明了利用三阱技术在二极管串钳内部进行ESD放电的机制，这在文献中从未基于模拟或测量来做过。

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