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首页> 外文期刊>IEEE Transactions on Communications >RS-Enhanced TCM for Multilevel Flash Memories
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RS-Enhanced TCM for Multilevel Flash Memories

机译:用于多层闪存的RS增强型TCM

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摘要

Multilevel flash memories store more than one bit per storage cell and are further characterized by large word (page) sizes and very low target error rates. In this paper, a high-rate error control scheme is presented that uses inner trellis-coded modulation (TCM) for storing two bits per cell with five possible charge levels. The coded subset-label bits and the uncoded signal-label bits of TCM are independently protected by separate outer Reed-Solomon (RS) codes. The resulting scheme permits multistage decoding. Errors made by the TCM decoder in the subset-label bits occur in bursts and are corrected by the associated first RS decoder prior to determining signal-label bits and correcting errors in those bits by the associated second RS decoder. The multi-stage decoding avoids the significant spread of errors from subset-label bits into the generally larger number of signal-label bits which is typical for conventional serial RS-TCM concatenation when the inner TCM system operates at relatively low SNR. The error performance of the proposed scheme is evaluated at low error rates by a mixed simulation-analytic method. It is shown that the proposed scheme exhibits highly favorable performance vs. complexity tradeoffs compared to the other schemes.
机译:多级闪存每个存储单元存储一个以上的位,并且其特征还在于大字(页面)大小和非常低的目标错误率。在本文中,提出了一种高速率错误控制方案,该方案使用内部网格编码调制(TCM)每个单元存储两个位,并具有五个可能的电荷水平。 TCM的已编码子集标签位和未编码信号标签位由单独的外部里德-所罗门(RS)码独立保护。所得方案允许多级解码。 TCM解码器在子集标签位中产生的错误以突发形式出现,并在确定信号标签位并由关联的第二RS解码器纠正这些位中的错误之前,先由关联的第一RS解码器进行纠正。当内部TCM系统以相对较低的SNR运行时,多级解码避免了错误从子集标签位到信号标签位的大量扩散,这对于常规串行RS-TCM级联而言是典型的。通过混合仿真分析方法,以较低的错误率评估了该方案的错误性能。结果表明,与其他方案相比,该方案在性能和复杂度之间取得了很好的折衷。

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